Datasheet > KTC3202-Y

KTC3202-Y

更新时间： 2024-11-19 01:12:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	797K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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KTC3202-Y 数据手册

DIP Type

Transistors

NPN Transistors

KTC3202

Unit:mm

3.8 ± 0.3

TO-92

4.8 ± 0.3

■ Features

● Excellent hFE Linearity

● Complementary to KTA1270

0.60 Max

0.45 ± 0.1

0.5

1.Emitter

2.Collector

3.Base

1.27

2.54

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

500

625

150

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100uA， I

Ic= 1 mA，I =0

= 100uA， I = 0

CB= 35 V , I = 0

EB= 5V , I =0

E= 0

CBO

EBO

0.1

0.25

1.2

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=100mA, I

=10mA

=100mA, I

^CE= 1V, I

CE= 1V, I

=100mA

240

DC current gain

hFE

^CE= 6V, I

=400mA

Collector output capacitance

Transition frequency

^CB= 6V, I

^CE= 6V, I

= 0,f=1MHz

= 20mA

300

MHz

■ Classification of hfe(1)

Type

KTC3202-O

KTC3202-Y

120-240

Range

70-140

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