Datasheet > KTC3203

KTC3203

更新时间： 2024-11-21 14:52:59

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	806K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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KTC3203 技术参数

极性：	NPN	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.8	DC current gain - Min：	100
DC current gain - Max：	320	Transition frequency：	120
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

KTC3203 数据手册

KTC3203(NPN)

TO-92 Transistors

TO-92

1. EMITTER

COLLECTOR

3. BASE

Features

ꢀ

Complementary to KTA1271

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Units

Collector Current -Continuous

800

625

150

-55-150

℃

P_C

Collector Power Dissipation

Junction Temperature

Dimensions in inches and (millimeters)

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 0.1mA, I_B=0

I_C= 10mA, I_B=0

I_E= 0.1mA, I_C=0

V_CB= 35V , I_E=0

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

0.2

0.1

320

μA

Collector cut-off current

I_CEO

I_EBO

V_CE= 25V , I_B=0

Emitter cut-off current

V_EB= 5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C= 100mA

V_CE=1V, I_C= 700mA

I_C= 500 mA, I_B= 20mA

V_CE= 1V, I_C= 10mA

V_CE= 5 V, I_C= 10mA

V_CB=10V,I_E= 0,f=1MHz

100

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

0.5

0.8

Transition frequency

f _T

120

MHz

Collector Output Capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

160-320

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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