Datasheet > KTC3203

KTC3203

更新时间： 2024-11-18 11:32:15

品牌	Logo	应用领域
TGS		晶体晶体管
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描述
TO-92 Plastic-Encapsulate Transistors (NPN)

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中文翻译

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数据手册

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KTC3203 数据手册

TIGER ELECTRONIC CO.,LTD

TO-92 Plastic-Encapsulate Transistors

KTC3203

TRANSISTOR (NPN)

TO-92

FEATURES

1. EMITTER

2. COLLECTOR

3. BASE

Complementary to KTA1271

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

Unit

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

800

625

150

-55-150

℃

P_C

T_J

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 0.1mA, I_B=0

I_C= 10mA, I_B=0

I_E= 0.1mA, I_C=0

V_CB= 35V , I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

0.1

0.2

0.1

320

μA

Collector cut-off current

I_CEO

I_EBO

V_CE= 25V , I_B=0

Emitter cut-off current

V_EB= 5V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C= 100mA

V_CE=1V, I_C= 700mA

I_C= 500 mA, I_B= 20mA

V_CE= 1V, I_C= 10mA

V_CE= 5 V, I_C= 10mA

V_CB=10V,I_E= 0,f=1MHz

100

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

0.5

0.8

Transition frequency

f _T

120

MHz

Collector Output Capacitance

C_ob

CLASSIFICATION OF h_FE(1)

Rank

Range

100-200

160-320

A,June,2011

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KTC3203-O	SECOS	获取价格	NPN Plastic-Encapsulated Transistor
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