Datasheet > KTC3205

KTC3205

更新时间： 2024-06-27 12:11:22

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描述
PNP Transistor

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中文翻译

获取价格

数据手册

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KTC3205 数据手册

SMD Type

Transistors

Epitaxial Planar NPN Transistor

KTC3205

Unit:mm

SOT-89

1.50 ±0.1

4.50±0.1

1.80±0.1

■ Features

● Collector Power Dissipation: PC=500mW

● Collector Current: IC=2A

0.44±0.1

0.48±0.1

0.53±0.1

3.00±0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-Emitter voltage

Emitter-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

Collector Current

Collector Power Dissipation

Junction Temperature

500

℃

150

Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

Test conditons

IC= 1mA, IE=0

Min

Typ Max

Unit

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IC=10mA, IB=0

IE=1mA, IC=0

VCB=30V, IE=0

VEB=5V, IC=0

100

Emitter Cut-off Current

IEBO

DC Current Gain

hFE

VCE=2V, IC=500mA

IC=1.5A, IB=0.03A

100

320

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

VCE(sat)

VBE

2.0

VCE=2V, IC=500mA

VCB=10V, IE=0, f=1MHz

1.0

Transition frequency

120

MHz

Collector Output Capacitance

Cob

■ hFE Classification

Rank

Range

100～200

160～320

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