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KTC3205 PDF预览

KTC3205

更新时间: 2024-11-19 14:55:39
品牌 Logo 应用领域
鲁光 - LGE 双极型晶体管
页数 文件大小 规格书
2页 845K
描述
双极型晶体管

KTC3205 技术参数

极性:NPNCollector-emitter breakdown voltage:30
Collector Current - Continuous:2DC current gain - Min:100
DC current gain - Max:320Transition frequency:120
Package:TO-92LStorage Temperature Range:-55-150
class:Transistors

KTC3205 数据手册

 浏览型号KTC3205的Datasheet PDF文件第2页 
KTC3205  
TO-92L Transistor (NPN)  
TO-92L  
4.700  
5.100  
1. EMITTER  
2. COLLECTOR  
3. BASE  
7.800  
8.200  
3
2
0.600  
0.800  
1
Features  
0.350  
0.550  
—
Complementary to KTA1273  
13.800  
14.200  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
Units  
1.270 TYP  
Collector-Base Voltage  
30  
V
2.440  
2.640  
Collector-Emitter Voltage  
Emitter-Base Voltage  
30  
V
0.000  
0.300  
1.600  
5
V
0.350  
0.450  
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
2
1
A
3.700  
4.100  
1.280  
1.580  
PC  
W
4.000  
TJ  
150  
Dimensions in inches and (millimeters)  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
Emitter cut-off current  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Ic= 1mA , IE=0  
IC= 10mA, IB=0  
30  
30  
5
V
V
IE= 1mA, IC=0  
V
VCB= 30V, IE=0  
0.1  
0.1  
320  
2.0  
1.0  
µA  
µA  
IEBO  
VEB= 5V, IC=0  
DC current gain  
hFE  
VCE= 2 V, IC= 500 mA  
IC= 1.5A, IB= 30 mA  
VCE=2V, IC= 500mA  
100  
Collector-emitter saturation voltage  
Base-emitter voltage  
VCE (sat)  
VBE  
V
V
Transition frequency  
V
CE= 2 V, IC= 500mA  
120  
13  
MHz  
pF  
fT  
Collector Output Capacitance  
CLASSIFICATION OF hFE  
Rank  
VCB=10V, IE=0,f=1MHZ  
Cob  
O
Y
Range  
100-200  
160-320  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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