Datasheet > KTC3205

KTC3205

更新时间： 2024-09-11 14:55:43

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体管
页数	文件大小	规格书
4页	1124K
描述
SOT-89-3L

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KTC3205 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

)

KTC3205

TRANSISTOR (NPN

SOT-89-3L

FEATURES

1 2 3

1. BASE

High current application

Complementary to KTA1273

2. COLLECTOR

3. EMITTER

MARKING:

Solid dot = Green molding compound device,if none,

the normal device.

3205

MAXIMUM RATINGS(T

a=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

P_C

Collector Dissipation

0.5

℃

Operation Junction and Storage Temperature Range

T_J,T_stg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V(BR)

CBO

I_C= 1mA , I_E=0

V(BR)

CEO

I_C= 10mA, I_B=0

V(BR)

EBO

I_E= 1mA, I_C=0

I_CBO

I_EBO

V_CB= 30V, I_E=0

0.1

320

2.0

1.0

µA

Emitter cut-off current

V_EB= 5V, I_C=0

µA

DC current gain

h_FE

V_CE= 2 V, I_C= 500 mA

I_C= 1.5A, I_B= 30 mA

V_CE=2V, I_C= 500mA

100

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE

Transition frequency

_CE=2V, I_C= 500mA

120

MHz

f_T

V_CB=10V,

Collector Output Capacitance

C_ob

I_E=0V,f=1MH_Z

CLASSIFICA TION OF h_FE

Rank

Range

100-200

160-320

www.jscj-elec.com

Rev. - 2.1

12 3 4

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