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KTC3203Y PDF预览

KTC3203Y

更新时间: 2024-11-20 15:36:31
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体管
页数 文件大小 规格书
1页 294K
描述
Transistor

KTC3203Y 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.59
Base Number Matches:1

KTC3203Y 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
KTC3203  
TRANSISTOR (NPN)  
TO-92  
FEATURES  
1. EMITTER  
2. COLLECTOR  
3. BASE  
z
Complementary to KTA1271  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
35  
Unit  
V
30  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
800  
625  
150  
-55-150  
mA  
mW  
PC  
TJ  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
IC = 0.1mA, IB=0  
IC = 10mA, IB=0  
IE= 0.1mA, IC=0  
VCB= 35V , IE=0  
Min  
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
35  
30  
5
V
V
0.1  
0.2  
0.1  
320  
μA  
μA  
μA  
Collector cut-off current  
ICEO  
IEBO  
VCE= 25V , IB=0  
Emitter cut-off current  
VEB= 5V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=1V, IC= 100mA  
VCE=1V, IC= 700mA  
IC= 500 mA, IB= 20mA  
VCE= 1V, IC= 10mA  
VCE= 5 V, IC= 10mA  
VCB=10V,IE= 0,f=1MHz  
100  
35  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
0.5  
0.8  
V
V
Transition frequency  
f T  
120  
13  
MHz  
pF  
Collector Output Capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
100-200  
160-320  
A,June,2011  

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