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KTC3203Y-BP PDF预览

KTC3203Y-BP

更新时间: 2024-12-01 10:34:47
品牌 Logo 应用领域
美微科 - MCC 晶体管
页数 文件大小 规格书
3页 185K
描述
800mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC PACKAGE-3

KTC3203Y-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknown风险等级:5.7
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):160
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

KTC3203Y-BP 数据手册

 浏览型号KTC3203Y-BP的Datasheet PDF文件第2页浏览型号KTC3203Y-BP的Datasheet PDF文件第3页 
M C C  
KTC3203-O  
KTC3203-Y  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
General Purpose Application  
Switching Application  
Excellent hFE Linearity: hFE(2)=35(Min. ) at VCE=1.0V, IC=700mA  
Complementary to KTA1271  
Case Material: Molded Plastic. UL Flammability  
Epitaxial Planar  
NPN Transistor  
x
Classification Rating 94V-0 and MSL Rating 1  
x
Marking: KTC3203  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92  
A
E
Maximum Ratings  
Symbol  
Rating  
Rating  
30  
35  
5.0  
800  
800  
625  
-55 to +150  
-55 to +150  
Unit  
V
V
B
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
mA  
mA  
mW  
OC  
OC  
IE  
Base Current  
PC  
TJ  
TSTG  
Collector Power Dissipation  
Operating Junction Temperature  
Storage Temperature  
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
OFF CHARACTERISTICS  
ICBO  
Collector Cutoff Current  
(VCB=35Vdc,IE=0)  
Emitter Cutoff Current  
---  
---  
30  
---  
---  
---  
100  
100  
---  
nAdc  
nAdc  
Vdc  
D
IEBO  
(VEB=5.0Vdc, I =0)  
C
V
Emitter Cutoff Current  
(BR)CEO  
(IC=10mAdc, I =0)  
B
B
C
E
ON CHARACTERISTICS  
(1)  
hFE-1  
hFE-2  
VCE(sat)  
VBE  
DC Current gain  
100  
35  
---  
---  
320  
---  
---  
---  
(I =100mAdc, VCE=1.0Vdc)  
C
G
(2)  
DC Current gain  
(I =700mAdc, VCE=1.0Vdc)  
C
DIMENSIONS  
Collector-Emitter Saturation Voltage  
---  
----  
---  
0.5  
0.8  
---  
Vdc  
Vdc  
MHz  
pF  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
(I =500mAdc, IB=20mAdc)  
C
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
Base- Emitter Voltage  
0.5  
---  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
(VCE=1.0Vdc, I =10mAdc)  
C
fT  
Transistor Frequency  
120  
19  
(VCE=5.0Vdc, IC=10mAdc)  
E
G
Cob  
Collector Output Capacitance  
(VCB=6.0Vdc, IE=0, f=1.0MHz)  
---  
---  
(1) hFE(1) Classification O: 100~200, Y: 160~320  
www.mccsemi.com  
1 of 3  
Revision: 6  
2010/08/18  

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