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KTC3202-GR-AP PDF预览

KTC3202-GR-AP

更新时间: 2024-11-21 05:54:27
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 169K
描述
Small Signal Bipolar Transistor

KTC3202-GR-AP 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.72Base Number Matches:1

KTC3202-GR-AP 数据手册

 浏览型号KTC3202-GR-AP的Datasheet PDF文件第2页浏览型号KTC3202-GR-AP的Datasheet PDF文件第3页 
M C C  
KTC3202-O  
KTC3202-Y  
KTC3202-GR  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
General Purpose Application  
Switching Application  
Excellent hFE Linearity: hFE(2)=25(Min. ) at VCE=6V, IC=400mA  
Complementary to KTA1270  
Case Material: Molded Plastic. UL Flammability  
Epitaxial Planar  
NPN Transistor  
x
Classification Rating 94V-0 and MSL Rating 1  
x
Marking: KTC3202  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92  
A
E
Maximum Ratings  
Symbol  
Rating  
Rating  
30  
35  
5.0  
500  
500  
625  
-55 to +150  
-55 to +150  
Unit  
V
V
B
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
V
mA  
mA  
mW  
OC  
OC  
IE  
Base Current  
PC  
TJ  
TSTG  
Collector Power Dissipation  
Operating Junction Temperature  
Storage Temperature  
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
OFF CHARACTERISTICS  
ICBO  
Collector Cutoff Current  
(VCB=35Vdc,IE=0)  
Emitter Cutoff Current  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
D
IEBO  
(VEB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
(1)  
hFE-1  
hFE-2  
VCE(sat)  
VBE  
DC Current gain  
70  
25  
---  
---  
---  
---  
---  
---  
0.1  
400  
---  
---  
---  
C
B
E
(I =100mAdc, VCE=1.0Vdc)  
C
(2)  
DC Current gain  
(I =400mAdc, VCE=6.0Vdc)  
C
G
Collector-Emitter Saturation Voltage  
0.25  
1.0  
---  
Vdc  
Vdc  
MHz  
pF  
(I =100mAdc, IB=10mAdc)  
C
DIMENSIONS  
Base- Emitter Voltage  
0.8  
300  
7.0  
(VCE=1.0Vdc, I =100mAdc)  
Transistor Frequency  
(VCE=6.0Vdc, IC=20mAdc)  
Collector Output Capacitance  
(VCB=6.0Vdc, IE=0, f=1.0MHz)  
C
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.096  
MM  
MIN  
DIM  
A
B
C
D
MAX  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
fT  
.190  
.190  
.590  
.020  
.160  
.104  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
Cob  
---  
E
G
(1) hFE(1) Classification O: 70~140, Y: 120~240, GR: 200~400  
hFE(2) Classification O:25Min., Y: 40Min.  
www.mccsemi.com  
1 of 3  
Revision: 6  
2010/08/18  

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