SMD Type
Transistors
Digital Transistors
KTA200
SOT-23
Unit : mm
Ƶ Features
+0.1
-0.1
2.9
0.4
+0.1
-0.1
ƽ Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input
resistors (see equivalent circuit).
3
ƽ The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
1
2
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
ƽ Only the on/off conditions need to be set for operation,
for operation, making the circuit design easy.
ƽ Marking:93
1 : Base
2 : Emitter
3 : Collector
C
E
B
R1
Ƶ Absolute Maximum Ratings (Ta = 25ć)
Parameter
Collector-base voltage
Symbol
Rating
Unit
V
V
V
V
CBO
CEO
EBO
-50
-50
Collector-emitter voltage
Emitter-base voltage
-5
Collector current
I
C
-100
200
mA
Collector power dissipation
Junction Temperature
Storage Temperature Range
P
C
mW
T
J
150
ć
Tstg
-55 to 150
Ƶ Electrical Characteristics (Ta = 25ć)
Parameter
Symbol
Test Conditions
Min
-50
-50
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
Ic= -50 ȝAˈ I
Ic= -1 mAˈ I
= -50Aˈ I
CB= -50 V , I
EB= -4V , I
=-5 mA, I
CE= -5V, I
E
=0
B
=0
I
E
C
=0
I
CBO
EBO
CE(sat)
FE
V
V
E
=0
-0.5
-0.5
-0.3
600
6.11
μA
I
C
=0
=- 0.25mA
= -1mA
Collector-emitter saturation voltage
DC current gain
V
IC
B
V
h
V
-
C
100
250
4.7
Input resistance
R1
3.29
kȍ
Transition frequency
fT
V
CE= -10V, IC= -5mA,f=100MHz
250
MHz
1
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