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KTA200 PDF预览

KTA200

更新时间: 2024-11-19 18:09:31
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2页 204K
描述
PNP Digital Transistors

KTA200 数据手册

 浏览型号KTA200的Datasheet PDF文件第2页 
SMD Type  
Transistors  
Digital Transistors  
KTA200  
SOT-23  
Unit : mm  
Ƶ Features  
+0.1  
-0.1  
2.9  
0.4  
+0.1  
-0.1  
ƽ Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external input  
resistors (see equivalent circuit).  
3
ƽ The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
1
2
+0.1  
+0.05  
-0.01  
0.95  
-0.1  
0.1  
+0.1  
-0.1  
1.9  
ƽ Only the on/off conditions need to be set for operation,  
for operation, making the circuit design easy.  
ƽ Marking:93  
1 : Base  
2 : Emitter  
3 : Collector  
C
E
B
R1  
Ƶ Absolute Maximum Ratings (Ta = 25ć)  
Parameter  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
V
V
V
CBO  
CEO  
EBO  
-50  
-50  
Collector-emitter voltage  
Emitter-base voltage  
-5  
Collector current  
I
C
-100  
200  
mA  
Collector power dissipation  
Junction Temperature  
Storage Temperature Range  
P
C
mW  
T
J
150  
ć
Tstg  
-55 to 150  
Ƶ Electrical Characteristics (Ta = 25ć)  
Parameter  
Symbol  
Test Conditions  
Min  
-50  
-50  
-5  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
V
V
V
CBO  
CEO  
EBO  
Ic= -50 ȝAˈ I  
Ic= -1 mAˈ I  
= -50­Aˈ I  
CB= -50 V , I  
EB= -4V , I  
=-5 mA, I  
CE= -5V, I  
E
=0  
B
=0  
I
E
C
=0  
I
CBO  
EBO  
CE(sat)  
FE  
V
V
E
=0  
-0.5  
-0.5  
-0.3  
600  
6.11  
μA  
I
C
=0  
=- 0.25mA  
= -1mA  
Collector-emitter saturation voltage  
DC current gain  
V
IC  
B
V
h
V
-
C
100  
250  
4.7  
Input resistance  
R1  
3.29  
kȍ  
Transition frequency  
fT  
V
CE= -10V, IC= -5mA,f=100MHz  
250  
MHz  
1
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