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KTA1267-Y PDF预览

KTA1267-Y

更新时间: 2024-11-18 11:32:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 97K
描述
PNP General Purpose Application

KTA1267-Y 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:End Of Life零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.28其他特性:LOW NOISE
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KTA1267-Y 数据手册

 浏览型号KTA1267-Y的Datasheet PDF文件第2页浏览型号KTA1267-Y的Datasheet PDF文件第3页浏览型号KTA1267-Y的Datasheet PDF文件第4页 
M C C  
KTA1267-O  
KTA1267-Y  
KTA1267-GR  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)  
Low Noise: NF=1.0dB(Typ.), 10dB(Max.)  
Complementary to KTC3199  
Marking: A1267  
Case Material:Molded Plastic. UL Flammability  
Classificatio Rating 94-0 and MSL Rating 1  
PNP General  
Purpose Application  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92S  
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
50  
5.0  
150  
Unit  
V
V
V
mA  
A
A
E
B
IE  
Emitter Current  
150  
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
400  
-55 to +150  
-55 to +150  
mW  
OC  
OC  
C
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
OFF CHARACTERISTICS  
ICBO  
Collector-Base Cutoff Current  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
(VCB=50Vdc,I =0)  
E
D
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
(1)  
hFE  
VCE(sat)  
fT  
DC Current gain  
70  
---  
80  
---  
---  
400  
0.3  
---  
---  
Vdc  
MHz  
pF  
C
B
E
(I =2.0mAdc, VCE=6.0Vdc)  
C
Collector-Emitter Saturation Voltage  
0.1  
---  
(I =100mAdc, IB=10mAdc)  
G
C
Transistor Frequency  
(VCE=10Vdc, I =1.0mAdc)  
Collector Output Capacitance  
C
DIMENSIONS  
Cob  
4.0  
7.0  
INCHES  
MM  
(VCB=10Vdc, I =0, f=1.0MHz)  
E
DIM  
A
MIN  
MAX  
MIN  
MAX  
---  
NOTE  
NF  
Noise Figure  
.16  
.12  
4.00  
3.00  
(VCE=6.0Vdc, I =0.1mAdc, f=1.0kHz,  
---  
1.0  
10  
dB  
B
C
C
.59  
---  
15.00  
Rg=10KOHM)  
D
.02  
.08  
.20  
0.45  
2.00  
5.00  
(1) hFEClassification O: 70~140, Y: 120~240, GR: 200~400  
E
G
www.mccsemi.com  
1 of 4  
Revision: 5  
2008/02/01  

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