Datasheet > KTA1270

KTA1270

更新时间： 2024-11-19 14:54:19

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	806K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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KTA1270 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	30
Collector Current - Continuous：	0.5	DC current gain - Min：	70
DC current gain - Max：	240	Transition frequency：	200
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

KTA1270 数据手册

KTA1270(PNP)

TO-92 Transistors

TO-92

1. EMITTER

COLLECTOR

3. BASE

Features

ꢀ

Geenral purpose application switching application

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-35

-30

-5

Dimensions in inches and (millimeters)

Collector Current –Continuous

Collector Power Dissipation

Junction Temperature

-0.5

P_C

500

T_J

150

℃

T_stg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C= -100µA, I_E=0

I_C= -1mA , I_B=0

I_E= -100µA, I_C=0

V_CB= -35 V , I_E=0

-35

-30

-5

-0.1

240

µA

Emitter cut-off current

I_EBO

V_EB= -5 V ,

I_C=0

h_FE1

V_CE=-1 V, I_C= -100mA

V_CE=-6 V, I_C= -400mA

I_C= -100mA, I_B= -10mA

V_CE= -1V, I_C= -100mA

DC current gain

h_FE2

Collector-emitter saturation voltage

V_CE(sat)

V_BE(on)

-0.25

-1

Base-emitter

voltage

V_CE=-6 V, I_C= -20mA

f =100MHz

Transition frequency

200

MHz

f _T

Collector output capacitance

C_ob

V_CB=-6V,I_E=0,f=1MHz

CLASSIFICATION OF h_FE

Rank

h_FE(1)

Range

70-140

25(min)

120-240

40(min)

h_FE(2)

http://www.lgesemi.com

Revision:20170701-P1

mail:lge@lgesemi.com

中文翻译

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