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KTA1267-Y-AP-HF PDF预览

KTA1267-Y-AP-HF

更新时间: 2024-11-18 21:01:07
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
4页 389K
描述
Small Signal Bipolar Transistor,

KTA1267-Y-AP-HF 技术参数

是否Rohs认证: 符合生命周期:End Of Life
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.66湿度敏感等级:1
Base Number Matches:1

KTA1267-Y-AP-HF 数据手册

 浏览型号KTA1267-Y-AP-HF的Datasheet PDF文件第2页浏览型号KTA1267-Y-AP-HF的Datasheet PDF文件第3页浏览型号KTA1267-Y-AP-HF的Datasheet PDF文件第4页 
M C C  
KTA1267-O  
KTA1267-Y  
KTA1267-GR  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
·
Excellent hFE Linearity: hFE(0.1mA)/hFE(2.0mA)=0.95(Typ)  
Low Noise: NF=1.0dB(Typ.), 10dB(Max.)  
Complementary to KTC3199  
Marking: A1267  
Epoxy meets UL 94 V-0 flammability rating  
PNP General  
Purpose Application  
·
Moisture Sensitivity Level 1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92S  
B
Maximum Ratings  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Rating  
50  
50  
5.0  
150  
Unit  
V
V
V
mA  
A
C
IE  
Emitter Current  
150  
PC  
TJ  
TSTG  
Collector power dissipation  
Junction Temperature  
Storage Temperature  
400  
-55 to +150  
-55 to +150  
mW  
OC  
OC  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Typ Max  
Units  
1. GND  
2. OUT  
3. IN  
OFF CHARACTERISTICS  
ICBO  
Collector-Base Cutoff Current  
---  
---  
---  
---  
0.1  
0.1  
uAdc  
uAdc  
(VCB=50Vdc,I =0)  
E
IEBO  
Emitter-Base Cutoff Current  
(VEB=5.0Vdc, I =0)  
C
ON CHARACTERISTICS  
(1)  
hFE  
VCE(sat)  
fT  
DC Current gain  
70  
---  
80  
---  
---  
400  
0.3  
---  
---  
Vdc  
MHz  
pF  
1
(I =2.0mAdc, VCE=6.0Vdc)  
1
2
C
2
3
3
D
Collector-Emitter Saturation Voltage  
0.1  
---  
STRAIGHT LEAD BENT LEAD  
BULK PACK AMMO PACK  
(I =100mAdc, IB=10mAdc)  
C
E
Transistor Frequency  
(VCE=10Vdc, I =1.0mAdc)  
Collector Output Capacitance  
C
DIMENSIONS  
Cob  
4.0  
7.0  
(VCB=10Vdc, I =0, f=1.0MHz)  
Noise Figure  
INCHES  
MM  
E
DIM  
A
MIN  
.056  
MAX  
.064  
MIN  
1.42  
3.90  
MAX  
1.62  
NOTE  
NF  
(VCE=6.0Vdc, I =0.1mAdc, f=1.0kHz,  
---  
1.0  
10  
dB  
C
B
C
.154  
.120  
.161  
.128  
4.10  
3.25  
Rg=10KOHM)  
3.05  
.050  
1.27  
Straight Lead  
Bent Lead  
2.64 Straight Lead  
(1) hFEClassification O: 70~140, Y: 120~240, GR: 200~400  
D
.086  
.096  
.173  
.594  
.110  
.104  
.220  
.610  
2.20  
2.44  
4.40  
2.80  
E
L
Bent Lead  
5.60  
15.50  
15.10  
* For ammo packing detailed specification, click here to visit our website  
of product packaging for details.  
www.mccsemi.com  
1 of 4  
Revision: C  
2013/01/01  

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