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KTA1073T PDF预览

KTA1073T

更新时间: 2024-11-19 22:32:03
品牌 Logo 应用领域
KEC 晶体驱动器显示器晶体管开关光电二极管高压局域网
页数 文件大小 规格书
3页 400K
描述
EPITAXIAL PLANAR PNP TRANSISTOR(HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER,CATHODE RAY TUBE BRIGHTNESS CONTROL)

KTA1073T 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.77Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):50
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):55 MHz
Base Number Matches:1

KTA1073T 数据手册

 浏览型号KTA1073T的Datasheet PDF文件第2页浏览型号KTA1073T的Datasheet PDF文件第3页 
SEMICONDUCTOR  
KTA1073T  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
HIGH VOLTAGE CONTROL APPLICATIONS.  
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS.  
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS.  
E
B
K
DIM MILLIMETERS  
_
FEATURES  
A
B
2.9+0.2  
1.6+0.2/-0.1  
High Voltage : VCBO=-300V, VCEO=-300V  
Low Saturation Voltage : VCE(sat)=-0.5V(Max.)  
Small Collector Output Capacitance : Cob=5.5pF(Typ.)  
Complementary to KTC3207T.  
_
0.70+0.05  
C
D
2
1
3
_
0.4+0.1  
E
F
2.8+0.2/-0.3  
_
1.9+0.2  
G
0.95  
_
0.16+0.05  
H
I
0.00-0.10  
0.25+0.25/-0.15  
0.60  
J
K
L
0.55  
I
H
MAXIMUM RATINGS (Ta=25  
CHARACTERISTIC  
)
J
J
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
RATING  
-300  
-300  
-5  
UNIT  
V
1. EMITTER  
2. BASE  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
3. COLLECTOR  
V
V
-100  
-20  
mA  
mA  
W
TSM  
IB  
Base Current  
PC *  
Tj  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
0.9  
150  
Tstg  
-55 150  
* Package mounted on a ceramic board (600  
0.8  
)
Marking  
h
Rank  
FE  
Lot No.  
Type Name  
S X  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
-0.1  
-0.1  
-
UNIT  
VCB=-300V, IE=0  
VEB=-5V, IC=0  
-
-
-
-
A
A
V
V
IEBO  
Emitter Cut-off Current  
V(BR)CBO  
V(BR)CEO  
hFE(1)  
IC=-0.1mA, IE=0  
IC=-1mA, IB=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
-300  
-300  
30  
50  
-
-
-
-
VCE=-10V, IC=-1mA  
-
-
DC Current Gain  
hFE(2) (Note) VCE=-10V, IC=-20mA  
-
200  
-0.5  
-1.2  
-
VCE(sat)  
VBE(sat)  
fT  
IC=-20mA, IB=-2mA  
IC=-20mA, IB=-2mA  
VCE=-10V, IC=-20mA  
VCB=-20V, IE=0, f=1MHz  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-
V
V
-
-
50  
-
55  
5.5  
MHz  
pF  
Cob  
Collector Output Capacitance  
6.0  
Note : hFE(1) Classification  
O:50 150, Y:100~200  
2002. 11. 7  
Revision No : 1  
1/3  

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