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KTA1266_15 PDF预览

KTA1266_15

更新时间: 2024-11-19 01:07:15
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描述
PNP Transistors

KTA1266_15 数据手册

 浏览型号KTA1266_15的Datasheet PDF文件第2页 
DIP Type  
Transistors  
PNP Transistors  
KTA1266  
Unit:mm  
3.8 ± 0.3  
TO-92  
4.8 ± 0.3  
Features  
Excellent hFE Linearity  
Low Noise  
Complementary to KTC3198  
0.60 Max  
0.45 ± 0.1  
0.5  
2
3
1
1.Emitter  
2.Collector  
3.Base  
1.27  
2.54  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-50  
-50  
V
-5  
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
-150  
625  
mA  
P
C
mW  
T
J
150  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
-50  
-50  
-5  
Ic= -100uAI  
Ic= -1 mAI =0  
= -100 uAI =0  
CB= -50V , I =0  
EB= 5V , I =0  
E=0  
B
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.3  
-1.1  
400  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-100mA, I  
B
=-10mA  
=-10mA  
V
C
=-100mA, I  
B
hFE(1)  
V
V
CE= -6V, I  
CE= -6V, I  
C
= -2mA  
70  
25  
DC current gain  
Noise figure  
hFE(2)  
C= -150mA  
V
CE=-6V, Ic=-0.1mA,  
NF  
10  
7
dB  
f=1KHZ, R  
g
=10KΩ  
Collector output capacitance  
Transition frequency  
Cob  
V
V
CB= -10V, I  
E=0,f=1MHz  
pF  
f
T
CE= -10V, I  
C= -1mA  
80  
MHz  
Classification of hfe(1)  
Type  
KTA1266-O  
KTA1266-Y  
120-240  
KTA1266-G  
200-400  
Range  
70-140  
1
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