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KTA1266A PDF预览

KTA1266A

更新时间: 2024-11-18 05:41:03
品牌 Logo 应用领域
KEC 半导体
页数 文件大小 规格书
2页 54K
描述
SEMICONDUCTOR TECHNICAL DATA

KTA1266A 技术参数

生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.68
其他特性:LOW NOISE最大集电极电流 (IC):0.15 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

KTA1266A 数据手册

 浏览型号KTA1266A的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KTA1266A  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
GENERAL PURPOSE APPLICATION.  
SWITCHING APPLICATION.  
B
C
FEATURES  
· Excellent hFE Linearity  
: hFE(2)=80(Typ.) at VCE=-6V, IC=-150mA  
: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.).  
· Low Noise : NF=1dB(Typ.). at f=1kHz.  
· Complementary to KTC3198A.  
DIM MILLIMETERS  
N
A
B
C
D
4.70 MAX  
4.80 MAX  
3.70 MAX  
0.45  
E
K
D
G
1.00  
E
F
1.27  
G
H
J
0.85  
0.45  
_
14.00 +0.50  
H
MAXIMUM RATING (Ta=25)  
K
L
M
0.55 MAX  
2.30  
F
F
CHARACTERISTIC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
SYMBOL RATING  
UNIT  
V
0.45 MAX  
1.00  
N
3
1
2
VCBO  
VCEO  
VEBO  
IC  
-50  
-50  
1. EMITTER  
2. COLLECTOR  
3. BASE  
V
-5  
V
-150  
-50  
mA  
mA  
mW  
TO-92 (F)  
IB  
Base Current  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature Range  
400  
Tj  
150  
Tstg  
-55150  
ELECTRICAL CHARACTERISTICS (Ta=25)  
CHARACTERISTIC  
Collector Cut-off Current  
Emitter Cut-off Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
VCB=-50V, IE=0  
VEB=-5V, IC=0  
-
-
-
-
-0.1  
-0.1  
400  
-
μA  
μA  
IEBO  
hFE(1) (Note) VCE=-6V, IC=-2mA  
70  
25  
-
-
DC Current Gain  
hFE(2)  
VCE(sat)  
VBE(sat)  
fT  
VCE=-6V, IC=-150mA  
-
IC=-100mA, IB=-10mA  
IC=-100mA, IB=-10mA  
VCE=-10V, IC=-1mA  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Transition Frequency  
-0.1  
-
-0.3  
-1.1  
-
V
V
-
80  
-
-
MHz  
pF  
Cob  
VCB=-10V, IE=0, f=1MHz  
VCB=-10V, IE=1mA, f=30MHz  
Collector Output Capacitance  
Base Intrinsic Resistance  
Noise Figure  
4.0  
30  
1.0  
7.0  
-
rbb'  
-
NF  
VCE=-6V, IC=-0.1mA, Rg=10k, f=1kHz  
-
10  
dB  
Note : hFE(1) Classification O:70140, Y:120240, GR:200400  
2010. 1. 28  
Revision No : 1  
1/2  

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