Datasheet > KTA1266-Y

KTA1266-Y

更新时间： 2024-02-12 19:24:58

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描述
PNP Plastic Encapsulated Transistor

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中文翻译

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数据手册

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KTA1266-Y 数据手册

KTA1266

-0.15A , -50V

PNP Plastic Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-92

FEATURE

ꢀ

Excellent h_FELinearity

Low Noise

Complementary to KTC3198

CLASSIFICATION OF h_{FE (1)}

Product-Rank

KTA1266-O

KTA1266-Y

120~240

KTA1266-GR

200~400

Range

70~140

1Emitter

2Collector

3Base

Collector

Base

Millimeter

REF.

Min.

4.40

4.30

12.70

3.30

0.36

Max.

4.70

3.81

0.56

Min.

Max.

0.30

0.51

1.27 TYP.

1.10

2.42

0.36

1.40

2.66

0.76

Emitter

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Symbol

Ratings

Unit

V_CBO

V_CEO

V_EBO

I_C

-50

Collector to Emitter Voltage

Emitter to Base Voltage

-50

-5

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

-150

°C

P_C

625

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ. Max.

Unit

Test Conditions

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-50

-5

I_C= -100µA, I_E=0

I_C= -1mA, I_B=0

I_E= -100µA, I_C=0

-0.1

400

µA

V_CB= -50V, I_E=0

Emitter Cut-Off Current

I_EBO

V_EB= -5V, I_C=0

h_{FE (1)}

h_{FE (2)}

V_CE(sat)

V_BE(sat)

f_T

V_CE= -6V, I_C= -2mA

V_CE= -6V, I_C= -150mA

I_C= -100mA, I_B= -10mA

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

-0.3

-1.1

MHz V_CE= -10V, I_C= -1mA

Collector Output Capacitance

C_ob

V_CE= -10V, I_E=0, f=1MHz

V_CE= -6V, I_C= -0.1mA,

f=1KHz, Rg=10KΩ

Noise Figure

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

18-Dec-2012 Rev. A

Page 1 of 1

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