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KTA1267 PDF预览

KTA1267

更新时间: 2024-11-18 12:36:43
品牌 Logo 应用领域
永而佳 - WINNERJOIN 晶体晶体管
页数 文件大小 规格书
1页 137K
描述
TRANSISTOR (PNP)

KTA1267 数据手册

  
RoHS  
KTA1267  
KTA1267 TRANSISTOR (PNP)  
TO-92S  
FEATURES  
Power dissipation  
1. EMITTER  
PCM:  
0.4  
W (Tamb=25)  
2. COLLECTOR  
3. BASE  
Collector current  
ICM:  
-0.15  
-50  
A
Collector-base voltage  
V(BR)CBO  
:
V
Operating and storage junction temperature range  
123  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Test conditions  
Ic=-100µA, IE=0  
Ic=-1mA, IB=0  
MIN  
-50  
-50  
-5  
TYP  
MAX  
UNIT  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V
IE=-100µA, IC=0  
µA  
µA  
VCB=-50V, IE=0  
-0.1  
-0.1  
400  
-0.3  
IEBO  
Emitter cut-off current  
VEB=-5V, IC=0  
hFE(1)  
DC current gain  
VCE=-6V, IC=-2mA  
70  
80  
VCE(sat)  
V
Collector-emitter saturation voltage  
Transition frequency  
IC=-100mA, IB=-10mA  
VCE=-10V, IC=-1mA  
MHz  
pF  
fT  
Cob  
7
Collector output capacitance  
V
CB=-10V, IE=0, f=1MHz  
V
CE=-6V, Ic=-0.1mA,  
NF  
10  
dB  
Noise figure  
f=1KHZ, Rg=10K  
CLASSIFICATION OF hFE(1)  
WEJ ELECTRONIC CO.,LTD  
Rank  
O
Y
GR  
Range  
Marking  
70-140  
120-240  
200-400  
Http:// www.wej.cn  
E-mail:wej@yongerjia.com  
WEJ ELECTRONIC CO.  

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