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KTA1045L PDF预览

KTA1045L

更新时间: 2024-09-24 22:32:03
品牌 Logo 应用领域
KEC 晶体放大器晶体管开关功率放大器局域网
页数 文件大小 规格书
2页 402K
描述
EPITAXIAL PLANAR PNP TRANSISTOR (LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING)

KTA1045L 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.75Is Samacsys:N
最大集电极电流 (IC):1 A集电极-发射极最大电压:120 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):110 MHz
Base Number Matches:1

KTA1045L 数据手册

 浏览型号KTA1045L的Datasheet PDF文件第2页 
SEMICONDUCTOR  
KTA1045D/L  
EPITAXIAL PLANAR PNP TRANSISTOR  
TECHNICAL DATA  
LOW FREQUENCY POWER AMP,  
MEDIUM SPEED SWITCHING APPLICATIONS  
A
C
I
J
FEATURES  
DIM MILLIMETERS  
_
6.60+0.2  
_
6.10+0.2  
_
5.0+0.2  
_
1.10+0.2  
_
2.70+0.2  
_
2.30+0.1  
A
B
C
D
E
F
High breakdown voltage VCEO 120V, high current 1A.  
Low saturation voltage and good linearity of hFE  
Complementary to KTC2025D/L  
.
H
I
1.00 MAX  
_
2.30+0.2  
_
0.5+0.1  
J
_
2.00+0.20  
_
H
K
L
M
O
P
P
0.50+0.10  
F
L
F
_
0.91+ 0.10  
_
0.90+0.1  
_
1.00+0.10  
1
2
3
Q
0.95 MAX  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
1. BASE  
2. COLLECTOR  
3. EMITTER  
SYMBOL RATING  
UNIT  
V
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-120  
DPAK  
-120  
V
-5  
V
A
C
I
-1  
-2  
J
Collector Current  
A
ICP  
DIM MILLIMETERS  
_
6.60 0.2  
+
_
6.10 0.2  
+
A
B
C
D
E
F
1.0  
Ta=25  
Tc=25  
Collector Power  
Dissipation  
PC  
W
_
+
5.0 0.2  
_
1.10  
9.50  
2.30  
+
0.2  
0.6  
0.1  
8
P
H
G
_
+
_
+
_
0.76 0.1  
+
Tj  
Junction Temperature  
150  
G
H
I
1.0 MAX  
_
2.30+0.2  
_
0.5 0.1  
+
Tstg  
J
Storage Temperature Range  
-55 150  
F
F
L
_
+
K
L
P
2.0 0.2  
_
+
0.50 0.1  
_
+
0.1  
1.0  
0.90 MAX  
1
2
3
Q
1. BASE  
2. COLLECTOR  
3. EMITTER  
IPAK  
ELECTRICAL CHARACTERISTICS (Ta=25  
)
CHARACTERISTIC  
Collector Cut of Current  
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
UNIT  
VCB=-50V, IE=0  
-
-
-1  
A
A
V
V
V
IEBO  
VEB=-4V, IC=0  
Emitter Cut of Current  
-
-120  
-120  
-5  
-
-1  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
hFE(1) Note  
hFE(2)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
IC=-10 A, IE=0  
-
-
IC=-1mA, IB=0  
-
-
-
IE=-10 A, IC=0  
-
320  
-
VCE=-5V, IC=-50mA  
VCE=-5V, IC=-500mA  
VCE=-10V, IC=-50mA  
VCB=-10V, IE=0, f=1MHz  
IC=-500mA, IB=-50mA  
IC=-500mA, IB=-50mA  
100  
20  
-
-
DC Current Gain  
-
fT  
Gain Bandwidth Product  
110  
30  
-
MHz  
pF  
V
Cob  
Output Capacitance  
-
-
VCE(sat)  
VBE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
-
-0.15  
-0.85  
-0.4  
-1.2  
-
V
I
B2  
I
B1  
ton  
toff  
tstg  
Turn-on Time  
-
80  
-
-
-
1  
24Ω  
100Ω  
20µsec  
Turn-off Time  
Storage Time  
-
-
100  
600  
Switching Time  
nS  
1uF  
1uF  
-12V  
2V  
=-12V  
=10I =-10I =500mA  
V
CE  
I
C
B1 B2  
(Note) : hFE(1) Classification Y:100 200, GR:160 320  
2003. 3. 27  
Revision No : 5  
1/2  

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