Datasheet > KTA1049_08

KTA1049_08

更新时间： 2024-11-20 11:32:15

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	47K
描述
EPITAXIAL PLANAR PNP TRANSISTOR

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数据手册

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KTA1049_08 数据手册

SEMICONDUCTOR

KTA1049

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

DIM MILLIMETERS

Low Collector-Emitter Saturation Voltage

: V_CE(sat)=-2.0V(Max.).

10.0+0.3

15.0+0.3

2.70 0.3

0.76+0.09/-0.05

Complementary to KTC2028.

Φ3.2 0.2

3.0+0.3

12.0 0.3

0.5+0.1/-0.05

13.6 0.5

3.7 0.2

1.2+0.25/-0.1

1.5+0.25/-0.1

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

SYMBOL RATING

UNIT

2.54+0.1

6.8 0.1

4.5 0.2

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-100

-5

2.6+0.2

0.5 Typ

1. BASE

-5

2. COLLECTOR

3. EMITTER

I_B

Base Current

-0.5

P_C

Collector Power Dissipation (Tc=25

Junction Temperature

)

T_j

150

TO-220IS

T_stg

Storage Temperature Range

-55 150

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

V_CB=-100V, I_E=0

MIN.

TYP.

MAX.

UNIT

-100

-1

I_EBO

V_EB=-5V, I_C=0

I_C=-50mA, I_B=0

Emitter Cut-off Current

V_(BR)CEO

Collector-Emitter Breakdown Voltage

-100

h_FE(1) (Note) V_CE=-5V, I_C=-1A

240

DC Current Gain

h_FE(2)

V_CE(sat)

V_BE

V_CE=-5V, I_C=-4A

I_C=-4A, I_B=-0.4A

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

-2.0

-1.5

V_CE=-5V, I_C=-4A

V_CE=-5V, I_C=-1A

V_CB=-10V, I_E=0, f=1MHz

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification O:70 140 , Y:120 240

2008. 6. 11

Revision No : 3

1/2

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