Datasheet > KTA1070-O

KTA1070-O

更新时间： 2024-09-26 01:11:47

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	1278K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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KTA1070-O 数据手册

DIP Type

Transistors

PNP Transistors

KTA1070

TO-92L

Unit:mm

4.9 ± 0.2

0.7 ±0.1

■ Features

● Low collector output capacitance

● High voltage and High fT

● Complementary to KTC3467

0.45 ±0.1

1.27

2.54 ±0.1

1.60 ^(max)

Emitter

2.Collector

3.Base

4.0(min)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

-200

-5

Unit

Collector - Base Voltage

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

-100

-200

150

℃

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CBO

CEO

EBO

-200

-5

Ic= -100uA， I

Ic= -1 mA，I =0

= -100 uA， I =0

CB= -150V , I =0

EB= -4 V , I =0

E=0

CBO

EBO

-0.1

-0.6

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

CE(sat)

BE(sat)

=-20mA, I

=-2mA

C=-20mA, I

B=-2mA

CE= -5V, I

= -10mA

240

Reverse transfer capacitance

Collector output capacitance

Transition frequency

CB= -30V, f=1MHz

1.7

2.6

150

^CE= -30V, I

C= -10mA

MHz

■ Classification of hfe

Type

KTA1070-O

KTA1070-Y

120-240

Range

70-140

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中文翻译

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