Datasheet > KTA1046-G

KTA1046-G

更新时间： 2022-02-26 12:23:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1275K
描述
PNP Transistors

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KTA1046-G 数据手册

DIP Type

Transistors

PNP Transistors

KTA1046

Unit: mm

TO-220F

±0.20

2.54

8^±0

±0.20

0.70

φ3.

■ Features

● Low saturation voltage and good linearity of hFE.

● Complementary to KTC2026

±0.20

2.76

1.47max

±0.20

0.50

±0.20

0.80

1. Base

2. Collector

3. Emitter

2.54typ

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Base Current

Symbol

Rating

Unit

VCBO

VCEO

VEBO

-60

-7

-3

-0.5

Collector Power Dissipation

Ta = 25℃

Tc = 25℃

℃

Junction Temperature

150

Storage Temperature range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-60

-7

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= -10 mA， I

Ic= -50 mA，I

= -10 mA， I

CB= -60V , I =0

EB= -7V , I =0

CBO

EBO

-0.1

-1

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitter voltage

CE(sat)

BE(sat)

=-2 A, I

=-200mA

=-2 A, I

-1.2

-1

CE= -5V, I

C= -500 mA

C= -3 A

hFE(1)

100

300

DC current gain

hFE(2)

Turn-on Time

Storage Time

Fall Time

ton

tstg

0.4

1.7

0.5

Collector output capacitance

Transition frequency

CB= -10V, I

= 0,f=1MHz

CE= -5V, I = -500mA

MHz

■ Classification of hfe(1)

Type

KTA1046-Y

KTA1046-G

160-300

Range

100-200

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