Datasheet > KTA1050

KTA1050

更新时间： 2024-05-23 22:21:50

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	40K
描述
TO-220IS(1)

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中文翻译

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数据手册

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KTA1050 数据手册

SEMICONDUCTOR

KTA1050

EPITAXIAL PLANAR PNP TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

FEATURES

DIM MILLIMETERS

10.16 0.2

· Low Collector-Emitter Saturation Voltage

: V_CE(sat)=-2.0V(Max.).

15.87 0.2

2.54 0.2

0.8 0.1

· Suffix U : Qualified to AEC-Q101.

ex) KTA1050-Y-U/PU

3.18

0.1

3.3 0.1

12.57 0.2

0.5 0.1

13.0 0.5

3.23 0.1

1.47 MAX

2.54 0.2

6.68 0.2

4.7

0.2

2.76 0.2

MAXIMUM RATING (Ta=25℃)

CHARACTERISTIC

SYMBOL RATING

UNIT

TO-220IS (1)

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-100

-5

Collector Current

-5

I_B

Base Current

-0.5

P_C

℃

Collector Power Dissipation (Tc=25℃)

Junction Temperature

T_j

150

T_stg

Storage Temperature Range

-55∼ 150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

I_EBO

TEST CONDITION

V_CB=-100V, I_E=0

MIN.

TYP.

MAX.

UNIT

-100

-1

μA

V_EB=-5V, I_C=0

I_C=-50mA, I_B=0

Emitter Cut-off Current

V_(BR)CEO

Collector-Emitter Breakdown Voltage

-100

h_FE(1) (Note) V_CE=-5V, I_C=-1A

240

DC Current Gain

h_FE(2)

V_CE(sat)

V_BE

V_CE=-5V, I_C=-4A

I_C=-4A, I_B=-0.4A

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

-2.0

-1.5

V_CE=-5V, I_C=-4A

V_CE=-5V, I_C=-1A

V_CB=-10V, I_E=0, f=1MHz

f_T

Transition Frequency

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification O:70∼ 140 , Y:120∼ 240

2018. 04. 10

Revision No : 1

1/2

中文翻译

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