是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | SFM | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.56 | 其他特性: | HIGH RELIABILITY |
最大集电极电流 (IC): | 3 A | 集电极-发射极最大电压: | 800 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 50 W | 最大功率耗散 (Abs): | 50 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 15 MHz | 最大关闭时间(toff): | 3300 ns |
最大开启时间(吨): | 500 ns | VCEsat-Max: | 2 V |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
KSC5027OJ69Z | FAIRCHILD | Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC5027ON | FAIRCHILD | Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC5027OTU | ROCHESTER | 3A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB, TO-220, 3 PIN |
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KSC5027OTU | FAIRCHILD | NPN Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL |
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KSC5027OTU | ONSEMI | NPN芯片晶体管 |
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KSC5027R | FAIRCHILD | High Voltage and High Reliability |
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