KSC5021RTU

更新时间： 2024-11-02 12:54:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
7页	308K
描述
NPN Silicon Transistor

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中文翻译

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数据手册

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KSC5021RTU 数据手册

October 2008

KSC5021

NPN Silicon Transistor

•

High Voltage and High Reliability

High Speed Switching : t_F= 0.1ms (Typ.)

Wide SOA

TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings

= 25°C unless otherwise noted

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Units

Collector-Base Voltage

800

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

500

I_CP

I_B

P_C

Collector Dissipation (T_C=25°C)

Junction Temperature

Storage Temperature

°C

T_J

150

T_STG

- 55 ~ 150

KSC5021 Rev. 1.0.0

www.fairchildsemi.com

12 3 4 5 6 7

中文翻译

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KSC5024	SAMSUNG	获取价格	NPN (HIGH VOLTAGE AND HIGH RELIABILITY)
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KSC5024O	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5024-O	SAMSUNG	获取价格	Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5024OTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5024R	FAIRCHILD	获取价格	Power Bipolar Transistor, 10A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,