5秒后页面跳转
KSC5025 PDF预览

KSC5025

更新时间: 2024-01-25 00:02:58
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 59K
描述
High Voltage and High Reliabilty

KSC5025 数据手册

 浏览型号KSC5025的Datasheet PDF文件第2页浏览型号KSC5025的Datasheet PDF文件第3页浏览型号KSC5025的Datasheet PDF文件第4页浏览型号KSC5025的Datasheet PDF文件第5页 
KSC5025  
High Voltage and High Reliabilty  
High Speed Switching  
Wide SOA  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
800  
V
V
CBO  
CEO  
EBO  
500  
V
7
V
I
I
I
15  
25  
A
C
A
CP  
B
4
A
P
T
T
Collector Dissipation (T =25°C)  
100  
W
°C  
°C  
C
C
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 1mA, I = 0  
800  
500  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= 5mA, I = 0  
B
I = 1mA, I = 0  
E
C
V
(sus)  
I
= 5A, I = -I = 2A  
500  
CEX  
C
B1  
B2  
L = 500µH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 500V, I = 0  
10  
10  
50  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 1.2A  
15  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 6A  
C
V
V
(sat)  
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 6A, I = 1.2A  
1
V
V
CE  
C
C
B
= 6A, I = 1.2A  
1.5  
BE  
B
C
V
V
V
= 10V, I = 0, f = 1MHz  
160  
18  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
E
f
t
t
t
Current Gain Bandwidth Product  
Turn On Time  
= 10V, I = 1.2A  
T
C
= 200V  
0.5  
3
ON  
I
= 5I = -2. 5I = 7A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 28.6Ω  
L
Fall Time  
0.3  
µs  
h
Classificntion  
FE  
Classification  
R
O
Y
h
15 ~ 30  
20 ~ 40  
30 ~ 50  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

KSC5025 替代型号

型号 品牌 替代类型 描述 数据表
KSC2751 FAIRCHILD

功能相似

High Speed High Current Switching Industrial Use
2SC4460 SANYO

功能相似

Switching Regulator Applications
2SC3527 PANASONIC

功能相似

Silicon PNP Triple-Diffused Planar Type

与KSC5025相关器件

型号 品牌 获取价格 描述 数据表
KSC5025O FAIRCHILD

获取价格

Power Bipolar Transistor, 15A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5025RTU FAIRCHILD

获取价格

Power Bipolar Transistor, 15A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5025Y FAIRCHILD

获取价格

Power Bipolar Transistor, 15A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5025YTU FAIRCHILD

获取价格

Power Bipolar Transistor, 15A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5026 FAIRCHILD

获取价格

High Voltage and High Reliability
KSC5026J69Z FAIRCHILD

获取价格

Power Bipolar Transistor, 1.5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Pla
KSC5026M FAIRCHILD

获取价格

High Voltage and High Reliability
KSC5026M_11 FAIRCHILD

获取价格

NPN Silicon Transistor
KSC5026MOS FAIRCHILD

获取价格

NPN Silicon Transistor
KSC5026MOS ONSEMI

获取价格

NPN芯片晶体管