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KSC5027 PDF预览

KSC5027

更新时间: 2024-09-25 05:41:03
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
4页 88K
描述
Silicon NPN Power Transistors

KSC5027 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.54
Is Samacsys:NBase Number Matches:1

KSC5027 数据手册

 浏览型号KSC5027的Datasheet PDF文件第2页浏览型号KSC5027的Datasheet PDF文件第3页浏览型号KSC5027的Datasheet PDF文件第4页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
KSC5027  
DESCRIPTION  
·With TO-220C package  
·High voltage and high reliability  
·High speed switching  
·Wide area of safe operation  
PINNING  
PIN  
1
DESCRIPTION  
Base  
Collector;connected to  
mounting base  
2
3
Emitter  
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current-Peak  
Base current  
CONDITIONS  
Open emitter  
VALUE  
1100  
800  
7
UNIT  
V
Open base  
V
Open collector  
V
3
A
ICM  
10  
A
IB  
1.5  
A
PC  
Collector dissipation  
Junction temperature  
Storage temperature  
TC=25  
50  
W
Tj  
150  
-55~150  
Tstg  

与KSC5027相关器件

型号 品牌 获取价格 描述 数据表
KSC5027F FAIRCHILD

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High Voltage and High Reliability
KSC5027F FOSHAN

获取价格

TO-220F
KSC5027FN FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5027F-N FAIRCHILD

获取价格

3 A, 800 V, NPN, Si, POWER TRANSISTOR
KSC5027FO FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
KSC5027F-O FAIRCHILD

获取价格

3 A, 800 V, NPN, Si, POWER TRANSISTOR
KSC5027FOTU FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,
KSC5027FR FAIRCHILD

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暂无描述
KSC5027F-R FAIRCHILD

获取价格

3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
KSC5027FRYDTU FAIRCHILD

获取价格

Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy,