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KSC5021F PDF预览

KSC5021F

更新时间: 2024-02-08 22:29:46
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 60K
描述
High Voltage and High Reliability

KSC5021F 技术参数

生命周期:ActiveReach Compliance Code:compliant
风险等级:5.64其他特性:HIGH RELIABILITY
最大集电极电流 (IC):5 A集电极-发射极最大电压:500 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:NPN
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):18 MHz
Base Number Matches:1

KSC5021F 数据手册

 浏览型号KSC5021F的Datasheet PDF文件第2页浏览型号KSC5021F的Datasheet PDF文件第3页浏览型号KSC5021F的Datasheet PDF文件第4页浏览型号KSC5021F的Datasheet PDF文件第5页 
KSC5021F  
High Voltage and High Reliability  
High Speed Switching : t = 0.1µs(Typ.)  
Wide SOA  
F
TO-220F  
1.Base 2.Collector 3.Emitter  
1
NPN Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
800  
V
V
CBO  
CEO  
EBO  
500  
7
V
I
I
I
5
A
C
10  
A
CP  
B
2
40  
A
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
Emitter-Base Breakdown Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 1mA, I = 0  
800  
500  
7
V
V
V
V
CBO  
CEO  
EBO  
C
C
E
BV  
BV  
= 5mA, I = 0  
B
I = 1mA, I = 0  
E
C
V
(sus)  
I
= 2.5A, I = -I = 1A  
500  
CEX  
C
B1  
B2  
L = 1mH, Clamped  
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
V
V
= 500V, I = 0  
10  
10  
50  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= 5V, I = 0  
C
h
h
V
V
= 5V, I = 0.6A  
15  
8
FE1  
FE2  
CE  
CE  
C
= 5V, I = 3A  
C
V
V
(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Output Capacitance  
I
I
= 3A, I = 0.6A  
1
V
V
CE  
BE  
C
C
B
(sat)  
= 3A, I = 0.6A  
1.5  
B
C
V
V
V
= 10V, I = 0, f = 1MHz  
80  
15  
pF  
MHz  
µs  
ob  
CB  
CE  
CC  
E
f
Current Gain Bandwidth Product  
Turn On Time  
= 10V, I = 0.6A  
T
C
t
t
t
= 200V  
0.5  
3
ON  
I
= 5I = -2.5I = 4A  
Storage Time  
C
B1 B2  
µs  
STG  
F
R = 50Ω  
L
Fall Time  
0.3  
µs  
h
Classification  
FE  
Classification  
R
O
Y
h
15 ~ 30  
20 ~ 40  
30 ~ 50  
FE1  
©2002 Fairchild Semiconductor Corporation  
Rev. B1, December 2002  

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