KSC5021FRTSTU

更新时间： 2024-02-20 22:40:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	57K
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中文翻译

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数据手册

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KSC5021FRTSTU 数据手册

KSC5021

High Voltage and High Reliability

•

High Speed Switching : t = 0.1µs (Typ.)

Wide SOA

TO-220

1.Base 2.Collector 3.Emitter

NPN Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

800

CBO

CEO

EBO

500

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Emitter Sustaining Voltage

= 1mA, I = 0

800

500

CBO

CEO

EBO

= 5mA, I = 0

I = 1mA, I = 0

(sus)

= 2.5A, I = -I = 1A

500

CEX

L = 1mH, Clamped

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

= 500V, I = 0

µA

CBO

EBO

= 5V, I = 0

= 5V, I = 0.6A

FE1

FE2

= 5V, I = 3A

(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Output Capacitance

= 3A, I = 0.6A

1.5

= 10V, I = 0, f=1MHz

MHz

µs

Current Gain Bandwidth Product

Turn ON Time

= 10V, I = 0.6A

= 200V

0.5

= 5I = -2.5I = 4A

Storage Time

B1 B2

µs

STG

R = 50Ω

Fall Time

0.3

µs

Classification

15 ~ 30

20 ~ 40

30 ~ 50

FE1

Rev. A1, June 2001

12 3 4 5

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