Datasheet > KSC5021FR

KSC5021FR

更新时间： 2024-11-03 09:21:31

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
1页	107K
描述
Transistor

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中文翻译

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数据手册

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KSC5021FR 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220F Plastic-Encapsulate Transistors

TO – 220F

KSC5021F TRANSISTOR (NPN)

1. BASE

FEATURES

2. COLLECTOR

3. EMITTER

High Speed Switching

High Voltage and High Reliability

Wide ASO

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Value

Unit

800

Collector-Emitter Voltage

Emitter-Base Voltage

500

Collector Current

P_C

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

℃/W

℃

R_θJA

T_j

62.5

150

T_stg

Storage Temperature

-55~+150

℃

ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test

conditions

Min

800

500

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=1mA,I_E=0

I_C=5mA,I_B=0

I_E=1mA,I_C=0

V_CB=500V,I_E=0

V_EB=5V,I_C=0

μA

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=5V, I_C=0.6A

V_CE=5V, I_C=3A

I_C=3A,I_B=0.6A

V_CB=10V,I_E=0, f=1MHz

VCE=10V,IC=0.6A

DC current gain

h_FE(2)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

V_CE(sat)

V_{BE (sat)}

C_ob

1.5

f_T

MHz

CLASSIFICATION OF h_{FE (1)}

RANK

RANGE

15-30

20-40

30-50

A,Dec,2010

中文翻译

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