生命周期: | Obsolete | 零件包装代码: | TO-220AB |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.28 |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 120 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | MATTE TIN |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
KSC2334-O | SAMSUNG | Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2334OTU | FAIRCHILD | Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2334-R | SAMSUNG | Power Bipolar Transistor, 7A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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KSC2334Y | ONSEMI | NPN外延硅晶体管 |
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KSC2334YTU | FAIRCHILD | NPN Epitaxial Silicon Transistor, 3LD, TO220, JEDEC, MOLDED, 1000/RAIL |
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KSC2334YTU | ONSEMI | NPN外延硅晶体管 |
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KSC2335 | FAIRCHILD | High Speed, High Voltage Switching |
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KSC2335F | FAIRCHILD | High Speed, High Voltage Switching |
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KSC2335F | SAMSUNG | Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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KSC2335FO | FAIRCHILD | Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, |
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