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KSB596Y PDF预览

KSB596Y

更新时间: 2024-10-29 13:02:03
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飞兆/仙童 - FAIRCHILD 晶体放大器晶体管功率双极晶体管功率放大器局域网
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5页 49K
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KSB596Y 数据手册

 浏览型号KSB596Y的Datasheet PDF文件第2页浏览型号KSB596Y的Datasheet PDF文件第3页浏览型号KSB596Y的Datasheet PDF文件第4页浏览型号KSB596Y的Datasheet PDF文件第5页 
KSB596  
Power Amplifier Applications  
Complement to KSD526  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 80  
Units  
V
V
V
V
Collector-Base Voltage  
CBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current(DC)  
Base Current  
- 80  
V
CEO  
EBO  
- 5  
V
I
- 4  
A
C
I
- 0.4  
30  
A
B
P
Collector Dissipation (T =25°C)  
W
°C  
°C  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
- 80  
- 5  
Typ.  
Max.  
Units  
BV  
I
I
= - 50mA, I = 0  
V
V
CEO  
EBO  
C
E
B
BV  
= - 10mA, I = 0  
C
I
I
V
V
= - 80V, I = 0  
- 70  
- 100  
240  
µA  
µA  
CBO  
EBO  
CB  
EB  
E
= - 5V, I = 0  
C
h
h
DC Current Gain  
V
V
= - 5V, I = - 0.5A  
40  
15  
FE1  
FE2  
CE  
CE  
C
= - 5V, I = - 3A  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter ON Voltage  
I
= - 3A, I = - 0.3A  
- 1  
- 1  
- 1.7  
- 1.5  
V
V
CE  
C
B
V
V
V
= - 5V, I = - 3A  
C
BE  
CE  
CE  
CB  
f
Current Gain Bandwidth Product  
Output Capacitance  
= - 5V, I = - 0.5A  
3
MHz  
pF  
T
C
C
= - 10V, I = 0  
130  
ob  
E
f = 1MHz  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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