KSB1015OTU

更新时间： 2024-10-28 13:09:11

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飞兆/仙童 - FAIRCHILD		晶体放大器晶体管功率双极晶体管功率放大器局域网
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KSB1015OTU 数据手册

KSB1015

Low Frequency Power Amplifier

•

Low Collector Emitter Saturation Voltage

Complement to KSD1406

TO-220F

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

- 60

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current(DC)

Base Current

CBO

- 60

CEO

EBO

- 7

- 3

- 0.5

Collector Dissipation (T =25°C)

°C

Junction Temperature

Storage Temperature

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

Units

= - 50mA, I = 0

- 60

CEO

CBO

EBO

= - 60V, I = 0

- 100

200

µA

= - 7V, I = 0

DC Current Gain

= - 5V, I = - 0.5A

FE1

FE2

= - 5V, I = - 3A

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter ON Voltage

Current Gain Bandwidth Product

Output Capacitance

Turn ON Time

= - 3A, I = - 0.3A

- 0.5

- 0.7

- 1

= - 5V, I = - 0.5A

MHz

µs

= - 10V, f = 1MHz

150

0.4

1.7

0.5

= - 30V, I = - 1A

= -I = -0.2A

Storage Time

µs

STG

R = 30Ω

Fall Time

µs

Classification

60 ~ 120

100 ~ 200

FE1

Rev. A, February 2000

12 3 4

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与KSB1015OTU相关器件

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KSB1015Y	FAIRCHILD	获取价格	Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
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KSB1015YTU	FAIRCHILD	获取价格	PNP Epitaxial Silicon Transistor, TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD,
KSB1015YTU	ONSEMI	获取价格	PNP外延硅晶体管
KSB1017	SAMSUNG	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSB1017	FAIRCHILD	获取价格	Power Amplifier Applications
KSB1017O	FAIRCHILD	获取价格	暂无描述
KSB1017-O	SAMSUNG	获取价格	Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3
KSB1017OTU	FAIRCHILD	获取价格	Transistor,