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KSB1022 PDF预览

KSB1022

更新时间: 2024-10-27 22:32:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关
页数 文件大小 规格书
4页 50K
描述
High Power Switching Applications

KSB1022 数据手册

 浏览型号KSB1022的Datasheet PDF文件第2页浏览型号KSB1022的Datasheet PDF文件第3页浏览型号KSB1022的Datasheet PDF文件第4页 
KSB1022  
High Power Switching Applications  
High DC Current Gain  
Low Collector-Emitter Saturation Voltage  
Complement to KSD1417  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Silicon Darlington Transisto  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
CBO  
- 60  
V
CEO  
EBO  
- 5  
V
I
I
I
- 7  
A
C
- 10  
A
CP  
B
- 0.7  
2
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
30  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Emitter Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
I
= - 50mA, I = 0  
- 60  
V
CEO  
CBO  
EBO  
C
B
I
I
V
V
= - 60V, I = 0  
- 100  
- 4  
µA  
mA  
CB  
EB  
E
= - 5V, I = 0  
C
h
h
DC Current Gain  
V
V
= - 3V, I = - 3A  
2000  
1000  
15000  
FE1  
FE2  
CE  
CE  
C
= - 3V, I = - 7A  
C
V
(sat)  
Collector-Emitter Saturation Voltage  
I
I
= - 3A, I = - 6mA  
- 0.95  
- 1.3  
- 1.5  
- 2  
V
V
CE  
C
C
B
= - 7A, I = - 14mA  
B
V
(sat)  
Base-Emitter Saturation Voltage  
Turn ON Time  
I
= - 3A, I = - 6mA  
- 1.55  
0.8  
2
- 2.5  
V
BE  
C
B
t
t
t
V
I
= - 45V, I = - 3A  
µs  
µs  
µs  
ON  
CC  
C
= - I = - 6mA  
Storage Time  
B1  
B2  
STG  
F
R = 15Ω  
L
Fall Time  
2.5  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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