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KSB1098RTU PDF预览

KSB1098RTU

更新时间: 2024-10-28 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器功率放大器
页数 文件大小 规格书
4页 49K
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KSB1098RTU 数据手册

 浏览型号KSB1098RTU的Datasheet PDF文件第2页浏览型号KSB1098RTU的Datasheet PDF文件第3页浏览型号KSB1098RTU的Datasheet PDF文件第4页 
KSB1098  
Low Frequency Power Amplifier  
Low Speed Switchng Industrial Use  
Complement to KSD1589  
TO-220F  
1.Base 2.Collector 3.Emitter  
1
PNP Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
- 100  
- 100  
- 7  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
V
V
CBO  
CEO  
EBO  
V
I
I
- 5  
A
C
- 8  
A
CP  
B
I
- 0.5  
2
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
20  
C
C
T
Junction Temperature  
150  
J
T
Storage Temperature  
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
* DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
- 1  
Units  
µA  
I
I
V
V
= - 100V, I = 0  
CBO  
EBO  
CB  
EB  
E
= - 5V, I = 0  
- 3  
mA  
C
h
h
V
V
= - 2V, I = - 3A  
= - 2V, I = - 5A  
C
2000  
500  
15K  
FE1  
FE2  
CE  
CE  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn ON Time  
I
I
= - 3A, I = - 3mA  
- 1.5  
- 2  
V
CE  
C
C
B
= - 3A, I = - 3mA  
V
BE  
B
t
t
t
V
I
= - 50V, I = - 3A  
0.5  
1
µs  
µs  
µs  
ON  
CC  
C
= - I = - 3mA  
Storage Time  
B1  
B2  
STG  
F
R = 17Ω  
L
Fall Time  
1
* Pulse Test: PW350µs, Duty Cycle2% Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
2000 ~ 5000  
3000 ~ 7000  
5000 ~ 15000  
FE1  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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