KSB1116ALTA

更新时间： 2024-10-28 13:09:11

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KSB1116ALTA 数据手册

KSB1116/1116A

Audio Frequency Power Amplifier & Medium

Speed Switching

•

Complement to KSD1616/1616A

TO-92

1. Emitter 2. Collector 3. Base

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Ratings

Units

Collector-Base Voltage

Collector-Emitter Voltage

: KSB1116

: KSB1116A

-60

-80

CBO

: KSB1116

: KSB1116A

-50

-60

CEO

Emitter-Base Voltage

Collector Current (DC)

* Collector Current (Pulse)

-6

-1

EBO

-2

Collector Power Dissipation

Junction Temperature

Storage Temperature

0.75

150

°C

-55 ~ 150

STG

* PW≤10ms, Duty Cycle≤50%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Collector Cut-off Current

Emitter Cut-off Current

Test Condition

Min.

Typ.

Max.

-100

Units

= -60V, I =0

CBO

EBO

= -6V, I = 0

* DC Current Gain : KSB1116

: KSB1116A

= -2V, I = -100mA

135

600

400

FE1

= -2V, I = -1A

FE2

(on)

(sat)

* Base-Emitter On Voltage

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Output Capacitance

= -2V, I = -50mA

-600

-650

-0.2

-0.9

-700

-0.3

-1.2

I = -1A, I = -50mA

= -10V, I =0, f=1MHz

MHz

µs

Current Gain Bandwidth Product

Turn On Time

= -2V, I = -100mA

120

0.07

0.7

= -10V, I = -100mA

STG

= -I = -10mA

Storage Time

µs

(off)= 2~3V

Fall Time

0.07

µs

* Pulse Test: PW ≤350µs, Duty Cycle≤2%

Classification

135 ~ 270

200 ~ 400

300 ~ 600

FE1

Rev. A2, January 2002

12 3 4 5

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