Datasheet > KRC855E

KRC855E

更新时间： 2024-09-14 23:15:11

品牌	Logo	应用领域
KEC		晶体开关晶体管驱动局域网
页数	文件大小	规格书
6页	115K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

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KRC855E 数据手册

SEMICONDUCTOR

KRC851E~KRC856E

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

SWITCHING APPLICATION.

INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

FEATURES

ᴌWith Built-in Bias Resistors.

ᴌSimplify Circuit Design.

DIM MILLIMETERS

1.6+0.05

1.0+0.05

ᴌReduce a Quantity of Parts and Manufacturing Process.

ᴌHigh Packing Density.

1.6+0.05

1.2+0.05

0.50

0.2+0.05

0.5+0.05

0.12+0.05

EQUIVALENT CIRCUIT

OUT

BIAS RESISTOR VALUES

TYPE NO.

KRC851E

KRC852E

KRC853E

KRC854E

KRC855E

KRC856E

R1(kή) R2(kή)

4.7

1. Q COMMON (EMITTER)

2. Q IN (BASE)

3. Q OUT (COLLECTOR)

4. Q COMMON (EMITTER)

5. Q IN (BASE)

6. Q OUT (COLLECTOR)

2.2

4.7

COMMON

TES6

EQUIVALENT CIRCUIT (TOP VIEW)

MAXIMUM RATING (Ta=25ᴱ)

CHARACTERISTIC

SYMBOL

V_O

RATING

UNIT

Output Voltage

KRC851Eᴕ856E

KRC851E

20, -10

30, -10

40, -10

12, -5

20, -5

100

KRC852E

KRC853E

V_I

Input Voltage

KRC854E

KRC855E

KRC856E

I_O

P_D*

T_j

Output Current

ᴱ

Power Dissipation

Junction Temperature

Storage Temperature Range

* Total Rating.

200

KRC851Eᴕ856E

150

T_stg

-55ᴕ150

ᴱ

Marking

Type Name

MARK SPEC

TYPE

KRC851E KRC852E KRC853E KRC854E KRC855E KRC856E

MARK

NA NB NC ND NE NF

2002. 1. 24

Revision No : 1

1/6

12 3 4 5 6

中文翻译

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