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KRC867E PDF预览

KRC867E

更新时间: 2024-09-15 23:15:11
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
6页 72K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC867E 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.78Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):20JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KRC867E 数据手册

 浏览型号KRC867E的Datasheet PDF文件第2页浏览型号KRC867E的Datasheet PDF文件第3页浏览型号KRC867E的Datasheet PDF文件第4页浏览型号KRC867E的Datasheet PDF文件第5页浏览型号KRC867E的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRC866E~KRC872E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
0.50  
_
0.2+0.05  
4
D
H
J
_
0.5+0.05  
_
0.12+0.05  
P
P
EQUIVALENT CIRCUIT  
P
5
TYPE NO.  
KRC866E  
KRC867E  
KRC868E  
KRC869E  
KRC870E  
KRC871E  
KRC872E  
R1(k  
1
)
R2(k  
10  
)
OUT  
R1  
2.2  
2.2  
4.7  
10  
2.2  
10  
IN  
1. Q COMMON (EMITTER)  
1
2. Q IN (BASE)  
1
3. Q OUT (COLLECTOR)  
2
R2  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
1
10  
4.7  
10  
COMMON  
47  
TES6  
100  
100  
EQUIVALENT CIRCUIT (TOP VIEW)  
6
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25  
)
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
KRC866E~872E  
KRC866E  
KRC867E  
KRC868E  
KRC869E  
KRC870E  
KRC871E  
KRC872E  
10, -5  
12, -10  
12,-5  
VI  
Input Voltage  
20, -7  
30, -10  
40, -15  
40, -10  
100  
V
IO  
PD *  
Tj  
Output Current  
mA  
Power Dissipation  
Junction Temperature  
200  
mW  
KRC866E~872E  
150  
Tstg  
Storage Temperature Range  
* Total Rating.  
-55 150  
Marking  
Type Name  
6
5
4
MARK SPEC  
TYPE KRC866E KRC867E KRC868E KRC869E KRC870E KRC871E KRC872E  
MARK  
N2  
N4  
N5  
N6  
N7  
N8  
N9  
1
2
3
2002. 7. 10  
Revision No : 2  
1/6  

KRC867E 替代型号

型号 品牌 替代类型 描述 数据表
DDC143EH-7 DIODES

类似代替

NPN PRE-BIASED SMALL SIGNAL SOT-563 DUAL SURFACE MOUNT TRANSISTOR
EMF20T2R ROHM

功能相似

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT6, 6

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