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KRC861E

更新时间: 2024-11-17 23:15:11
品牌 Logo 应用领域
KEC 晶体开关晶体管驱动局域网
页数 文件大小 规格书
4页 53K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC861E 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6针数:6
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.77
其他特性:BUILT IN BIAS RESISTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):120JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

KRC861E 数据手册

 浏览型号KRC861E的Datasheet PDF文件第2页浏览型号KRC861E的Datasheet PDF文件第3页浏览型号KRC861E的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRC860E~KRC864E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
0.50  
_
0.2+0.05  
4
D
H
J
_
0.5+0.05  
EQUIVALENT CIRCUIT  
EQUIVALENT CIRCUIT (TOP VIEW)  
_
0.12+0.05  
P
P
P
5
6
5
4
C
R1  
B
Q1  
Q2  
1. Q EMITTER  
1
2. Q BASE  
1
3. Q COLLECTOR  
2
4. Q EMITTER  
2
5. Q BASE  
2
6. Q COLLECTOR  
1
E
1
2
3
TES6  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL RATING  
UNIT  
CHARACTERISTIC  
Collector Power Dissipation  
Junction Temperature  
SYMBOL RATING  
UNIT  
mW  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
5
V
V
PC *  
Tj  
200  
150  
V
Tstg  
Storage Temperature Range  
* Total Rating.  
-55 150  
100  
mA  
ELECTRICAL CHARACTERISTICS (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
100  
100  
-
UNIT  
nA  
VCB=50V, IE=0  
Collector Cut-off Current  
-
-
-
IEBO  
VEB=5V, IC=0  
Emitter Cut-off Current  
-
120  
-
nA  
hFE  
VCE=5V, IC=1mA  
IC=10mA, IB=0.5mA  
VCE=10V, IC=5mA  
DC Current Gain  
-
VCE(sat)  
fT *  
Collector-Emitter Saturation Voltage  
Transition Frequency  
0.1  
250  
0.3  
-
V
-
MHz  
KRC860E  
KRC861E  
-
-
-
-
-
4.7  
10  
-
-
-
-
-
KRC862E  
KRC863E  
KRC864E  
R1  
100  
22  
Input Resistor  
k
47  
Marking  
Type Name  
6
5
4
MARK SPEC  
TYPE  
KRC860E  
NK  
KRC861E  
KRC862E  
NN  
KRC863E  
NO  
KRC864E  
NP  
MARK  
NM  
1
2
3
2002. 7. 10  
Revision No : 2  
1/4  

KRC861E 替代型号

型号 品牌 替代类型 描述 数据表
KRC863E KEC

类似代替

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
RN1610(TE85L) TOSHIBA

功能相似

TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, SM6, 2-3N1A, 6 PIN,

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