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KRC863E

更新时间: 2024-11-19 23:15:11
品牌 Logo 应用领域
KEC 晶体开关晶体管驱动局域网
页数 文件大小 规格书
4页 53K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC863E 数据手册

 浏览型号KRC863E的Datasheet PDF文件第2页浏览型号KRC863E的Datasheet PDF文件第3页浏览型号KRC863E的Datasheet PDF文件第4页 
SEMICONDUCTOR  
KRC860E~KRC864E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
1.6+0.05  
_
1.2+0.05  
B1  
C
0.50  
_
0.2+0.05  
4
D
H
J
_
0.5+0.05  
EQUIVALENT CIRCUIT  
EQUIVALENT CIRCUIT (TOP VIEW)  
_
0.12+0.05  
P
P
P
5
6
5
4
C
R1  
B
Q1  
Q2  
1. Q EMITTER  
1
2. Q BASE  
1
3. Q COLLECTOR  
2
4. Q EMITTER  
2
5. Q BASE  
2
6. Q COLLECTOR  
1
E
1
2
3
TES6  
MAXIMUM RATING (Ta=25  
CHARACTERISTIC  
)
SYMBOL RATING  
UNIT  
CHARACTERISTIC  
Collector Power Dissipation  
Junction Temperature  
SYMBOL RATING  
UNIT  
mW  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
50  
50  
5
V
V
PC *  
Tj  
200  
150  
V
Tstg  
Storage Temperature Range  
* Total Rating.  
-55 150  
100  
mA  
ELECTRICAL CHARACTERISTICS (Ta=25  
CHARACTERISTIC  
)
SYMBOL  
ICBO  
TEST CONDITION  
MIN.  
TYP.  
MAX.  
100  
100  
-
UNIT  
nA  
VCB=50V, IE=0  
Collector Cut-off Current  
-
-
-
IEBO  
VEB=5V, IC=0  
Emitter Cut-off Current  
-
120  
-
nA  
hFE  
VCE=5V, IC=1mA  
IC=10mA, IB=0.5mA  
VCE=10V, IC=5mA  
DC Current Gain  
-
VCE(sat)  
fT *  
Collector-Emitter Saturation Voltage  
Transition Frequency  
0.1  
250  
0.3  
-
V
-
MHz  
KRC860E  
KRC861E  
-
-
-
-
-
4.7  
10  
-
-
-
-
-
KRC862E  
KRC863E  
KRC864E  
R1  
100  
22  
Input Resistor  
k
47  
Marking  
Type Name  
6
5
4
MARK SPEC  
TYPE  
KRC860E  
NK  
KRC861E  
KRC862E  
NN  
KRC863E  
NO  
KRC864E  
NP  
MARK  
NM  
1
2
3
2002. 7. 10  
Revision No : 2  
1/4  

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