Preliminary
KMM466S424CT
144pin SDRAM SODIMM
KMM466S424CT SDRAM SODIMM
4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD
GENERAL DESCRIPTION
FEATURE
The Samsung KMM466S424CT is a 4M bit x 64 Synchronous
Dynamic RAM high density memory module. The Samsung
KMM466S424CT consists of four CMOS 4M x 16 bit with
4banks Synchronous DRAMs in TSOP-II 400mil package and
a 2K EEPROM in 8-pin TSSOP package on a 144-pin glass-
epoxy substrate. Three 0.1uF decoupling capacitors are
mounted on the printed circuit board in parallel for each
SDRAM. The KMM466S424CT is a Small Outline Dual In-line
Memory Module and is intended for mounting into 144-pin
edge connector sockets.
•
Performance range
Part No.
Max Freq. (Speed)
KMM466S424CT-F0
100MHz (10ns @ CL=3)
•
Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
LVTTL compatible inputs and outputs
•
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs
Latency (Access from column address)
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
• All inputs are sampled at the positive going edge of the
system clock
Synchronous design allows precise cycle control with the use
of system clock. I/O transactions are possible on every clock
cycle. Range of operating frequencies, programmable laten-
cies allows the same device to be useful for a variety of high
bandwidth, high performance memory system applications.
• Serial presence detect with EEPROM
•
PCB : Height (1,000mil), double sided component
PIN CONFIGURATIONS (Front side/back side)
PIN NAMES
Pin Front Pin Back Pin Front Pin Back Pin Front Pin Back
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CLK0
Function
Address input (Multiplexed)
Select bank
1
3
VSS
DQ0
DQ1
DQ2
2
4
6
8
VSS
51 DQ14 52 DQ46 95 DQ21 96 DQ53
DQ32 53 DQ15 54 DQ47 97 DQ22 98 DQ54
Data input/output
Clock input
5
DQ33 55
DQ34 57
VSS
NC
NC
56
58
60
VSS
NC
NC
99 DQ23 100 DQ55
7
101
103
105
107
109
VDD
A6
102 VDD
104 A7
9
DQ3 10 DQ35 59
12
CKE0
CS0
Clock enable input
Chip select input
Row address strobe
Column address strobe
Write enable
11
VDD
VDD
A8
106 BA0
108 VSS
110 BA1
13 DQ4 14 DQ36
15 DQ5 16 DQ37
VSS
A9
Voltage Key
RAS
CAS
17 DQ6 18 DQ38 61 CLK0 62 CKE0 111 A10/AP 112 A11
19 DQ7 20 DQ39 63 64 VDD 113 114 VDD
21 22 65 RAS 66 CAS 115 DQM2 116 DQM6
WE
VDD
VDD
DQM0 ~ 7
VDD
DQM
VSS
VSS
Power supply (3.3V)
Ground
23 DQM0 24 DQM4 67
25 DQM1 26 DQM5 69
WE
68 *CKE1 117 DQM3 118 DQM7
70 *A12 119 120 VSS
CS0
VSS
VSS
27
29
31
33
35
VDD
A0
28
30
32
34
36
VDD
A3
71 *CS1 72 *A13 121 DQ24 122 DQ56
SDA
Serial data I/O
Serial clock
73
75
77
79
DU
VSS
NC
74 *CLK1 123 DQ25 124 DQ57
SCL
A1
A4
76
78
80
82
VSS 125 DQ26 126 DQ58
DU
Don¢t use
A2
A5
NC
NC
127 DQ27 128 DQ59
129 130 VDD
NC
No connection
VSS
VSS
NC
VDD
37 DQ8 38 DQ40 81
VDD
VDD 131 DQ28 132 DQ60
*
These pins are not used in this module.
39 DQ9 40 DQ41 83 DQ16 84 DQ48 133 DQ29 134 DQ61
41 DQ10 42 DQ42 85 DQ17 86 DQ49 135 DQ30 136 DQ62
43 DQ11 44 DQ43 87 DQ18 88 DQ50 137 DQ31 138 DQ63
** These pins should be NC in the system
which does not support SPD.
45
47 DQ12 48 DQ44 91
49 DQ13 50 DQ45 93 DQ20 94 DQ52 143
VDD
46
VDD
89 DQ19 90 DQ51 139
92 VSS 141 **SDA 142 **SCL
VDD 144 VDD
VSS
140 VSS
VSS
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
REV. 1 June 1998