Datasheet > KMB010P30QA_15

KMB010P30QA_15

更新时间： 2024-11-19 01:16:59

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
4页	741K
描述
P-Ch Trench MOSFET

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中文翻译

获取价格

数据手册

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KMB010P30QA_15 数据手册

SEMICONDUCTOR

KMB010P30QA

TECHNICAL DATA

P-Ch Trench MOSFET

GENERAL DESCRIPTION

This Trench MOSFET has better characteristics, such as fast switching time, low

on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly

suitable for Battery pack.

FEATURES

· V_DSS=-30V, I_D=-10A.

DIM MILLIMETERS

· Drain-Source ON Resistance.

R_DS(ON)=20mΩ (Max.) @ V_GS=-10V

R_DS(ON)=28mΩ (Max.) @ V_GS=-4.5V

· Super High Dense Cell Design

4.85 0.2

3.94 0.2

6.02 0.3

0.4 0.1

B1 B2

0.15+0.1/-0.05

1.63+0.2

0.65+0.2

1.27

MOSFET Maximum Ratings (Ta=25℃ Unless otherwise noted)

0.20+0.1/-0.05

0.1 MAX

CHARACTERISTIC

Drain Source Voltage

SYMBOL RATING UNIT

V_DSS

V_GSS

I_D*

I_DP

-30

±20

-10

Gate Source Voltage

FLP-8

Drain Current

Pulsed

-80

I_S

Drain Source Diode Forward Current

Drain Power Dissipation

-1.7

P_D*

T_j

2.0

Maximum Junction Temperature

Storage Temperature Range

150

℃

℃/W

T_stg

-55~150

62.5

KMB010P

30QA

R_thJA

Thermal Resistance, Junction to Ambient

Note : *Surface Mounted on FR4 Board

709

PIN CONNECTION (TOP VIEW)

2012. 6. 7

Revision No : 2

1/4

12 3 4

中文翻译

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