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KMB080N75PA PDF预览

KMB080N75PA

更新时间: 2024-11-18 11:30:47
品牌 Logo 应用领域
KEC 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 481K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KMB080N75PA 技术参数

生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:75 V
最大漏极电流 (ID):80 A最大漏源导通电阻:0.012 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):320 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

KMB080N75PA 数据手册

 浏览型号KMB080N75PA的Datasheet PDF文件第2页浏览型号KMB080N75PA的Datasheet PDF文件第3页浏览型号KMB080N75PA的Datasheet PDF文件第4页浏览型号KMB080N75PA的Datasheet PDF文件第5页浏览型号KMB080N75PA的Datasheet PDF文件第6页 
KMB080N75PA  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
A
It s mainly suitable for low voltage applications such as automotive,  
DC/DC converters and a load switch in battery powered applications  
O
C
F
E
I
DIM MILLIMETERS  
G
_
A
B
C
D
E
F
9.9 + 0.2  
B
15.95 MAX  
FEATURES  
Q
1.3+0.1/-0.05  
_
VDSS= 75V, ID= 80A  
Drain-Source ON Resistance :  
0.8 + 0.1  
_
3.6 0.2  
+
K
_
P
2.8 + 0.1  
R
DS(ON)=12m (Max.) @VGS = 10V  
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
J
D
_
J
13.08 + 0.3  
1.46  
H
K
L
M
N
O
P
N
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)  
_
1.4 0.1  
+
_
1.27 0.1  
+
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
DC  
Pulsed (Note 1)  
SYMBOL  
VDSS  
VGSS  
ID*  
RATING  
75  
UNIT  
V
_
2.54 0.2  
+
_
4.5 0.2  
+
_
2.4 0.2  
+
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
V
_
25  
80  
Q
9.2 +0.2  
A
Drain Current  
IDP  
320  
80  
A
TO-220AB  
IS  
Drain-Source Diode Forward Current  
Drain Power Dissipation  
A
PD*  
25  
300  
W
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
-55 175  
-55 175  
Tstg  
Note1) Pulse Test : Pulse width 10 S Duty cycle 1%  
Thermal Characteristics  
CHARACTERISTIC  
SYMBOL  
RthJA  
RATING  
62.5  
UNIT  
/W  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
RthJC  
0.5  
/W  
Equivalent Circuit  
D
G
S
2007. 10. 31  
Revision No : 2  
1/6  

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