Datasheet > KMB125F

KMB125F

更新时间： 2022-02-26 13:05:24

品牌	Logo	应用领域
圣诺 - SENO		/
页数	文件大小	规格书
2页	389K
描述
1.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

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KMB125F 数据手册

Zibo Seno Electronic Engineering Co., Ltd.

KMB12F – KMB125F

1.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER

Features

Schottky Barrier Chip

Ideally Suited for Automatic Assembly

Low Power Loss, High Efficiency

High Surge Current Capability

For Use in Low Voltage Application

Plastic Case Material has UL Flammability

Classification Rating 94V-O

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MB-F

Dim

Min

4.50

3.60

0.15

—

6.40

0.50

1.30

1.20

2.30

—

Max

4.95

4.10

0.35

0.20

7.00

1.10

1.70

1.60

2.70

1.80

Mechanical Data

Case: MB-F, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Case

Weight: 0.134 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

KMB

12F

KMB KMB KMB

KMB

115F 120F

KMB KMB

Symbol

Unit

Characteristic

14F

13F

15F

125F

16F

18F

110F

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

RWM

100

150

105

200

140

250

RMS Reverse Voltage

V^R(RMS)

I^O

175

Average Rectified Output Current @T_L= 90°C

1.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

Forward Voltage

@I_F= 1.0A

V^FM

I^RM

0.50

0.70

0.85

0.90

0.92

Peak Reverse Current

@T_A= 25°C

0.1

At Rated DC Blocking Voltage @T_A= 100°C

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance

R^ꢀ

°C/W

R^ꢀ^JA

C_j

°C

110

Operating Temperature Range

Storage Temperature Range

T^j

-65 to +150

T^STG

Note: 1. Mounted on P.C. Board with 5.0mm²copper pad area.

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KMB12F – KMB125F

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