Zibo Seno Electronic Engineering Co., Ltd.
KMB12F – KMB125F
1.0A SURFACE MOUNT SCHOTTKY BARRIER BRIDGE RECTIFIER
Features
G
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Schottky Barrier Chip
Ideally Suited for Automatic Assembly
Low Power Loss, High Efficiency
High Surge Current Capability
-
+
~
H
B
~
D
E
For Use in Low Voltage Application
Plastic Case Material has UL Flammability
Classification Rating 94V-O
A
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
MB-F
Dim
A
Min
4.50
3.60
0.15
—
6.40
0.50
1.30
1.20
2.30
—
Max
4.95
4.10
0.35
0.20
7.00
1.10
1.70
1.60
2.70
1.80
J
Mechanical Data
B
C
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Case: MB-F, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
D
K
E
G
H
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Polarity: As Marked on Case
Weight: 0.134 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version
J
K
L
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
KMB
12F
KMB KMB KMB
KMB KMB KMB
KMB
115F 120F
KMB KMB
Symbol
Unit
Characteristic
14F
13F
15F
125F
16F
18F
110F
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
V
RWM
20
14
30
40
50
60
80
100
150
105
200
140
250
V
V
R
RMS Reverse Voltage
VR(RMS)
IO
21
28
35
42
56
70
175
V
A
Average Rectified Output Current @TL = 90°C
1.0
30
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.50
0.70
0.85
0.90
0.92
V
Peak Reverse Current
@TA = 25°C
0.1
20
mA
At Rated DC Blocking Voltage @TA = 100°C
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance
JL
Rꢀ
10
50
°C/W
RꢀJA
Cj
pF
°C
°C
110
110
30
Operating Temperature Range
Storage Temperature Range
Tj
-65 to +150
-65 to +150
TSTG
Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.
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KMB12F – KMB125F
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