Datasheet > KM736V787-700000

KM736V787-700000

更新时间： 2024-11-15 21:18:43

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
16页	469K
描述
Cache SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

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技术参数
数据手册

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KM736V787-700000 技术参数

生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.82
Base Number Matches：	1

KM736V787-700000 数据手册

KM736V787

128Kx36 Synchronous SRAM

Document Title

128Kx36-Bit Synchronous Burst SRAM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

Initial draft

May. 15. 1997

Feb. 11. 1998

Preliminary

0.1

Modify power down cycle timing & Interleaved read timing,

Insert Note 4 at AC timing characteristics.

Change ISB1 value from 10mA to 30mA.

Change ISB2 value from 10mA to 20mA.

0.2

0.3

Change Undershoot spec

April. 14. 1998

May. 13. 1998

Preliminary

from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)

Add Overshoot spec 4.6V((pulse width£tCYC/2)

Change VIH max from 5.5V to VDD+0.5V

Change ISB2 value from 20mA to 30mA.

Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V.

1.0

2.0

Final spec Release

May. 15. 1998

Dec. 02. 1998

Final

Add VDDQ Supply voltage( 2.5V )

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

December 1998

Rev 2.0

12 3 4 5 6 7...16

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与KM736V787-700000相关器件

型号	品牌	获取价格	描述	数据表
KM736V787-8	SAMSUNG	获取价格	Cache SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V787-800000	SAMSUNG	获取价格	Cache SRAM, 128KX36, 8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V787-9	SAMSUNG	获取价格	Cache SRAM, 128KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V787-900000	SAMSUNG	获取价格	Cache SRAM, 128KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V789H-60	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.5ns, CMOS, PBGA119, BGA-119
KM736V789H-67	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, BGA-119
KM736V789H-72	SAMSUNG	获取价格	Cache SRAM, 128KX36, 4ns, CMOS, PBGA119, BGA-119
KM736V799H-40	SAMSUNG	获取价格	Cache SRAM, 128KX36, 2.5ns, CMOS, PBGA119, BGA-119
KM736V799H-44	SAMSUNG	获取价格	Cache SRAM, 128KX36, 2.8ns, CMOS, PBGA119, BGA-119
KM736V799H-50	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.1ns, CMOS, PBGA119, BGA-119