Datasheet > KM736V799H-57

KM736V799H-57

更新时间： 2024-11-15 15:36:27

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	467K
描述
Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA119, BGA-119

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技术参数
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KM736V799H-57 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	BGA, BGA119,7X17,50
针数：	119	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.92	Base Number Matches：	1

KM736V799H-57 数据手册

KM736V799

128Kx36 Synchronous SRAM

Document Title

128Kx36-Bit Synchronous Pipelined Burst SRAM

Revision History

Remark

Rev. No

History

Draft Date

Preliminary

0.0

0.1

Initial draft

April . 14. 1998

April . 20. 1998

Change Undershoot spec

from -3.0V(pulse width£20ns) to -2.0V(pulse width£tCYC/2)

Add Overshoot spec 4.6V(pulse width£tCYC/2)

Change VIH max from 5.5V to VDD+0.5V

Preliminary

0.2

Change tCD from 3.2ns to 3.1ns at bin -50.

Change tOE from 3.2ns to 3.1ns at bin -50.

Change setup from 1.5ns to 1.4ns at bin -50.

Change tCYC from 5.5ns to 5.4ns at bin -55.

May . 23. 1998

May . 25. 1998

0.3

Change tCD from 3.5ns to 3.1ns at bin -55.

Change tOE from 3.5ns to 3.1ns at bin -55.

Change setup from 1.5ns to 1.4ns at bin -55.

Preliminary

0.4

Add tCYC 175Mhz.

Change ISB2 from 20mA to 30mA.

May . 30. 1998

June. 08. 1998

0.5

Modify DC characteristics( Input Leakage Current test Conditions)

form VDD=VSS to VDD to Max.

Final

Fianl

1.0

2.0

3.0

4.0

Final Release.

June. 15 . 1998

July. 10 . 1998

Dec. 02. 1998

Mar. 04. 1999

Add tCYC 225Mhz.

Add VDDQ Supply voltage( 2.5V )

Change tCD , tOE from 3.1ns to 2.8ns at bin -44.

Change tHZC max , tHZOE max from 3.0ns to 2.8ns at bin -44.

Final

5.0

6.0

7.0

Add tCYC 250Mhz.

April. 10. 1999

May. 03. 1999

May. 10. 1999

Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -40.

1. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.4ns to 1.2ns at bin -44.

2. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.5ns to 0.4ns at bin -44.

3. Change tAS, tSS, tDS, tWS, tADVS, tCSS from 1.2ns to 0.8ns at bin -40.

4. Change tAH, tSH, tDH, tWH, tADVH, tCSH from 0.4ns to 0.3ns at bin -40.

Final

8.0

1. Change ISB value from 120mA to 130mA at -57

June. 24. 1999

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

June 1999

Rev 8.0

12 3 4 5 6 7...17

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与KM736V799H-57相关器件

型号	品牌	获取价格	描述	数据表
KM736V799T-44	SAMSUNG	获取价格	Cache SRAM, 128KX36, 2.8ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V799T-55	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.1ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V799T-57	SAMSUNG	获取价格	Cache SRAM, 128KX36, 3.3ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V7P-44	SAMSUNG	获取价格	Standard SRAM, 128KX36, 3.1ns, CMOS
KM736V7P-50	SAMSUNG	获取价格	Standard SRAM, 128KX36, 3.1ns, CMOS
KM736V847H-10	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 10ns, CMOS, PBGA119, BGA-119
KM736V847T-10	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM736V847T-70000	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM736V847T-80000	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
KM736V847T-9	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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