Datasheet > KM736V847T-9T

KM736V847T-9T

更新时间： 2024-11-16 03:11:07

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	385K
描述
ZBT SRAM, 256KX36, 9ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

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KM736V847T-9T 数据手册

KM736V847

KM718V947

256Kx36 & 512Kx18 Flow-Through NtRAM^TM

Document Title

256Kx36 & 512Kx18-Bit Flow Through NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

1. Initial document.

April. 09. 1998

June. 02. 1998

Preliminary

Modify from ADV to ADV at timing.

Add the Trade Mark( NtRAM^TM

)

0.2

Sep. 09. 1998

Preliminary

1. Changed tCD from 8.0ns to 8.5ns at -8

2. Changed tCYC from 13.0ns to 12.0ns at -10

3. Changed DC condition at Icc and parameters

Icc ; from 240mA to 260mA at -10,

ISB1 ; from 10mA to 30mA,

ISB2 ; from 10mA to 30mA.

0.3

Oct. 15. 1998

Preliminary

1. ADD 119BGA(7x17 Ball Grid Array Package) .

2. ADD x32 organization

0.4

0.5

1.0

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Preliminary

Final

ADD VDDQ Supply voltage( 2.5V )

Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

1. Final Spec Release.

2. Remove x32 organization.

2.0

3.0

4.0

Feb. 25. 1999

May. 13. 1999

Nov. 19. 1999

Final

1. Remove VDDQ Supply voltage( 2.5V I/O )

1. Add VDDQ Supply voltage( 2.5V I/O )

1. Add tCYC 117MHz.

2. Remove 119BGA package.

3. Change tCYC from 12ns to 10ns at -9.

4. Changed DC condition at Icc and parameters

Icc ; from 300mA to 280mA at -8,

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 4.0

12 3 4 5 6 7...17

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与KM736V847T-9T相关器件

型号	品牌	获取价格	描述	数据表
KM736V849-10	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V887	SAMSUNG	获取价格	256Kx36 & 512Kx18 Synchronous SRAM
KM736V887-10	SAMSUNG	获取价格	Standard SRAM, 256KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V887-8	SAMSUNG	获取价格	Standard SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V887-9	SAMSUNG	获取价格	Standard SRAM, 256KX36, 9ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V887H-10	SAMSUNG	获取价格	Cache SRAM, 256KX36, 10ns, CMOS, PBGA119, BGA-119
KM736V887H-8	SAMSUNG	获取价格	Cache SRAM, 256KX36, 8.5ns, CMOS, PBGA119, BGA-119
KM736V887H-9	SAMSUNG	获取价格	Cache SRAM, 256KX36, 9ns, CMOS, PBGA119, BGA-119
KM736V887T-10	SAMSUNG	获取价格	Cache SRAM, 256KX36, 10ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
KM736V887T-7	SAMSUNG	获取价格	Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100