Datasheet > KM718BV87T-90000

KM718BV87T-90000

更新时间： 2024-11-14 19:53:07

品牌	Logo	应用领域
三星 - SAMSUNG		信息通信管理静态存储器内存集成电路
页数	文件大小	规格书
12页	288K
描述
Cache SRAM, 64KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

KM718BV87T-90000 技术参数

PRELIMINARY

64Kx18 Synchronous SRAM

KM718BV87

Document Title

64Kx18 Synchronous Static SRAM, 3.3V Power

Data Sheets for 52 PLCC

Revision History

Rev.No.

History

Draft Date

Remark

Rev. 1.0

- Final specification release

Final

- Change specification format.

Final

Rev. 1.1

April, 1997

No change was made in parameters.

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to

change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this

device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

April 1997

- 1 -

Rev 1.1

12 3 4 5 6 7...12

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
KM718BV90J-8	SAMSUNG	获取价格	Standard SRAM, 64KX18, 8ns, BICMOS, PQCC52, PLASTIC, LCC-52
KM718BV91J-8	SAMSUNG	获取价格	Standard SRAM, 64KX18, 8ns, BICMOS, PQCC52, PLASTIC, LCC-52
KM718BV91J-9	SAMSUNG	获取价格	Standard SRAM, 64KX18, 9ns, BICMOS, PQCC52, PLASTIC, LCC-52
KM718FS4011AH-36	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM718FS4011AH-4	SAMSUNG	获取价格	Standard SRAM, 256KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM718FS4011AH-40	SAMSUNG	获取价格	Standard SRAM, 256KX18, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM718FV4002H-9	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 8ns, CMOS, PBGA119
KM718FV4011AH-33	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.8ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM718FV4011AH-36	SAMSUNG	获取价格	Standard SRAM, 256KX18, 1.9ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM718FV4011AH-4	SAMSUNG	获取价格	Late-Write SRAM, 256KX18, 2ns, CMOS, PBGA119