是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | WQFP, TQFP44,.6SQ,32 | 针数: | 44 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.71 | 风险等级: | 5.92 |
Is Samacsys: | N | 最长访问时间: | 150 ns |
备用内存宽度: | 16 | JESD-30 代码: | S-CQFP-G44 |
JESD-609代码: | e0 | 长度: | 10 mm |
内存密度: | 4194304 bit | 内存集成电路类型: | MASK ROM |
内存宽度: | 8 | 功能数量: | 1 |
端子数量: | 44 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX8 | 输出特性: | 3-STATE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | WQFP |
封装等效代码: | TQFP44,.6SQ,32 | 封装形状: | SQUARE |
封装形式: | FLATPACK, WINDOW | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 最大待机电流: | 0.00005 A |
子类别: | MASK ROMs | 最大压摆率: | 0.05 mA |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子节距: | 0.8 mm | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23C4100AFP2-20 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 200ns, CMOS, CQFP44, 10 X 10 MM, QFP-44 | |
KM23C4100AFP2-25 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 250ns, CMOS, CQFP44, 10 X 10 MM, QFP-44 | |
KM23C4100B-10 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23C4100B-12 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 120ns, CMOS, PDIP40, 0.600 INCH, PLASTIC, DIP-40 | |
KM23C4100BFP1-15 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 150ns, CMOS, CQFP44, 14 X 14 MM, QFP-44 | |
KM23C4100BFP2-15 | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 150ns, CMOS, CQFP44, 10 X 10 MM, QFP-44 | |
KM23C4100D | SAMSUNG |
获取价格 |
MASK ROM, 512KX8, 80ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23C4100D-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDIP40, 0.600 INCH, DIP-40 | |
KM23C4100DET | SAMSUNG |
获取价格 |
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM | |
KM23C4100DET-10 | SAMSUNG |
获取价格 |
MASK ROM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 |